SOT23 NPN SILICON PLANAR
HIGH PERFORMANCE TRANSISTOR
ISSUE 3 FEBRUARY 1996
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
* P
tot
= 500 mW
PARTMARKING DETAIL
455
FMMT455
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
tot
T
j
:T
stg
VALUE
160
140
5
2
1
200
500
-55 to +150
SOT23
UNIT
V
V
V
A
A
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition
Frequency
Output Capacitance
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
obo
100
10 Typ
100
15
MIN. MAX.
160
140
5
0.1
0.1
0.7
300
MHz
pF
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
V
CB
=140V
V
EB
=4V
I
C
=150mA, I
B
=15mA
I
C
=150mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
V
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
3 - 110
测试/测量
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