P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 SEPTEMBER 94
FEATURES
* 240 Volt V
DS
* R
DS(on)
=9Ω
* Low threshold
APPLICATIONS
* Electronic Hook Switch
ZVP4424A
D
G
S
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
-240
-200
-1
±
40
E-Line
TO92 Compatible
VALUE
UNIT
V
mA
A
V
mW
°C
750
-55 to +150
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
125
100
18
5
8
8
26
20
200
25
15
15
15
40
30
-0.75
-1.0
7.1
8.8
9
11
-240
-0.7
-1.4
-2.0
100
-10
-100
TYP
MAX. UNIT
V
V
nA
µ
A
µ
A
CONDITIONS.
I
D
=-1mA, V
GS
=0V
ID=-1mA, V
DS
= V
GS
V
GS
=
±
40V, V
DS
=0V
V
DS
=-240 V, V
GS
=0
V
DS
=-190V, V
GS
=0V, T=125°C
V
DS
=-10 V, V
GS
=-10V
V
GS
=-10V,I
D
=-200mA
V
GS
=-3.5V,I
D
=-100mA
V
DS
=-10V,I
D
=-0.2A
A
Ω
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DS
=-25V, V
GS
=0V, f=1MHz
V
DD
≈−
50V, I
D
=-0.25A,
V
GEN
=-10V
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% (2) Sample test.
(3) Switching times measured with 50
Ω
source impedance and <5ns rise time on a pulse generator
3-436
ZVP4424A
TYPICAL CHARACTERISTICS
-1.2
300µs Pulsed Test
V
GS
=-10V
-5V
-4V
-1.2
I
D
- Drain Current (Amps)
I
D
- Drain Current (Amps)
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
-2
-4
-6
-8
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
DS
=-10V
300µs Pulsed Test
-3V
-2.5V
-2V
-10
0
-2
-4
-6
-8
-10
V
DS
- Drain Source
Voltage (Volts)
V
GS
- Gate Source
Voltage (Volts)
Saturation Characteristics
400
400
Transfer Characteristics
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
300
300
200
300µs Pulsed Test
V
DS
=-10V
100
200
300µs Pulsed Test
V
DS
=-10V
100
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
0
0
-2
-4
-6
I
D
- Drain Current (Amps)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
RDS(on)-Drain Source On Resistance
(Ω)
Transconductance v gate-source voltage
100
V
GS
=-2V
-2.5V
2.4
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
V
GS=
-10V
I
D
=0.2A
-3V
-10V
10
Re
rce
ou
-S
ain
Dr
Gate T
h
Voltag reshold
e V
GS(T
H
)
R
D
ce
tan
sis
n)
S(o
300µs Pulsed Test
V
GS=
V
DS
I
D=
-1mA
1
-0.01
-0.1
-1
-10
100
125
150
I
D-
Drain Current (Amps)
Junction Temperature (°C)
On-resistance vs Drain Current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-437
ZVP4424A
TYPICAL CHARACTERISTICS
Note:V
GS=
0V
300
250
200
150
100
50
0
-0.01
-1
C
rss
-10
-100
C
iss
0
-2
-4
-6
-8
-10
-12
-14
Note:I
D=-
0.25A
-16
0
1
2
3
4
5
V
DS
= -20V
-50V
-100V
C
oss
V
DS
-Drain Source Voltage (Volts)
V
GS
-Gate Source Voltage (Volts)
C-Capacitance (pF)
Q-Gate Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
0.8
D=1 (D.C.)
Thermal Resistance (°C/W)
P
tot
-Power Dissipation (mW)
150
0.6
100
D=0.5
0.4
50
D=0.2
D=0.1
D=0.05
Single Pulse
0.2
0
0.0001
0
0.1
1
10
100
0.001
0.01
0
50
100
150
Pulse Width (seconds)
T
amb
- Ambient Temperature (°C)
Maximum transient thermal impedance
Derating Curve
3-438
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