SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 – MARCH 2001
FEATURES
*
Gain of 50 at I
C
=100mA
✪
FMMTA56
E
C
B
PARTMARKING DETAIL -
FMMTA56 - 2G
FMMTA56R - MB
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature
Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
FMMTA56
-80
-80
-4
-500
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
FMMTA56
PARAMETER
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector-Emitter Cut-Off
Current
Collector-Base Cut-Off Current
Static Forward Current Transfer
Ratio
Collector-Emitter Saturation
Voltage
Base-Emitter
Turn-On Voltage
Transition
Frequency
SYMBOL
V
(BR)CEO
V
(BR)EBO
I
CES
I
CBO
h
FE
V
CE(sat)
V
BE(on)
f
T
100
50
50
-0.25
-1.2
V
V
MHz
MIN.
-80
-4
-0.1
-0.1
MAX.
UNIT
V
V
CONDITIONS.
I
C
=-1mA, I
B
=0*
I
E
=-100
µ
A, I
C
=0
V
CE
=-60V
V
CB
=-80V, I
E
=0
V
CB
=-60V, I
E
=0
I
C
=-10mA, V
CE
=1V*
I
C
=-100mA, V
CE
=1V*
I
C
=-100mA, I
B
=-10mA*
I
C
=-100mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-2V
f=100MHz
µ
A
µ
A
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
TBA
测评中心专版
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
