74AHC1G04
SINGLE INVERTER GATE
Description
The 74AHC1G04 is a single inverter gate with a standard
push-pull output. The device is designed for operation with a
power supply range of 2.0V to 5.5V. The gate performs the
positive Boolean function:
Pin Assignments
(Top View)
NC
1
5 Vcc
A 2
GND 3
4 Y
SOT25 / SOT353
Y
=
A
NEW PRODUCT
Features
•
•
•
•
•
Supply Voltage Range from 2.0V to 5.5V
± 8 mA Output Drive at 5.0V
CMOS low power consumption
Schmitt Trigger Action at Input Makes the Circuit
Tolerant for Slower Input Rise and Fall Time
ESD Protection per JESD 22
o
o
o
•
•
•
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
Exceeds 1000-V Charged Device Model (C101C)
Applications
•
•
General Purpose Logic
Wide array of products such as:
o
PCs, networking, notebooks, netbooks, PDAs
o
Computer peripherals, hard drives, CD/DVD ROM
o
TV, DVD, DVR, set top box
o
Personal Navigation / GPS
o
MP3 players ,Cameras, Video Recorders
Latch-Up Exceeds 100mA per JESD 78, Class II
SOT25 and SOT353: Assembled with “Green” Molding
Compound (no Br, Sb)
Lead Free Finish / RoHS Compliant (Note 1)
1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
Notes:
74AHC1G04
Document number: DS35171 Rev. 1 - 2
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www.diodes.com
March 2011
© Diodes Incorporated
74AHC1G04
SINGLE INVERTER GATE
Pin Descriptions
Pin Name
NC
A
GND
Y
V
CC
Pin NO.
1
2
3
4
5
No Connection
Data Input
Ground
Data Output
Supply Voltage
Description
NEW PRODUCT
Logic Diagram
A
2
4
Y
Function Table
Inputs
A
H
L
Output
Y
L
H
74AHC1G04
Document number: DS35171 Rev. 1 - 2
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March 2011
© Diodes Incorporated
74AHC1G04
SINGLE INVERTER GATE
Absolute Maximum Ratings
(Note 2)
Symbol
ESD HBM
ESD CDM
ESD MM
V
CC
V
I
V
o
I
IK
I
OK
I
O
I
CC
I
GND
T
J
T
STG
Notes:
Description
Human Body Model ESD Protection
Charged Device Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high or low state
Input Clamp Current V
I
<0
Output Clamp Current (V
O
< 0 or V
O
> V
CC
)
Continuous output current (V
O
= 0 to V
CC
)
Continuous current through V
CC
Continuous current through GND
Operating Junction Temperature
Storage Temperature
Rating
2
1
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to V
CC
+0.5
-20
±20
±25
50
-50
-40 to 150
-65 to 150
Unit
KV
KV
V
V
V
V
mA
mA
mA
mA
mA
°C
°C
NEW PRODUCT
2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should
be within recommend values.
Recommended Operating Conditions
(Note 3)
Symbol
V
CC
Operating Voltage
V
CC
= 2V
V
IH
High-level Input Voltage
V
CC
= 3V
V
CC
= 5.5V
V
CC
= 2V
V
IL
V
I
V
O
I
OH
Low-level input voltage
Input Voltage
Output Voltage
V
CC
= 2V
High-level output current
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
V
CC
= 2V
I
OL
Low-level output current
V
CC
= 5V ± 0.5V
V
CC
= 3V
Δt/ΔV
T
A
Notes:
Parameter
Min
2
1.5
2.1
3.85
Max
5.5
Unit
V
V
0.5
0.9
1.65
V
V
V
uA
mA
uA
mA
V
CC
= 3V
V
CC
= 5.5V
0
0
5.5
V
CC
-50
-4
-8
50
4
8
100
20
Input transition rise or fall
rate
Operating free-air
temperature
V
CC
= 3.3V ± 0.3V
V
CC
= 5V ± 0.5V
-40
ns/V
ºC
125
3. Unused inputs should be held at V
CC
or Ground.
74AHC1G04
Document number: DS35171 Rev. 1 - 2
3 of 8
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March 2011
© Diodes Incorporated
74AHC1G04
SINGLE INVERTER GATE
Electrical Characteristics
Symbol
Parameter
Test Conditions
V
CC
2V
3V
4.5V
3V
4.5V
2V
3V
4.5V
I
OL
= 4mA
I
OL
= 8mA
I
I
I
CC
C
I
Input Current
Supply Current
Input
Capacitance
Thermal
Resistance
Junction-to-
Ambient
Thermal
Resistance
Junction-to-
Case
V
I
= 5.5 V or GND
V
I
= 5.5V or GND
I
O
=0
V
I
= V
CC
– or GND
SOT25
(Note 4)
SOT353
SOT25
(Note 4)
SOT353
155
430
58
o
Min
1.9
2.9
4.4
2.58
3.94
25ºC
Typ.
2
3
4.5
Max
-40ºC to 85ºC
Min
Max
1.9
2.9
4.4
2.48
3.8
-40ºC to 125ºC
Min
Max
1.9
2.9
4.4
2.40
3.70
Unit
I
OH
= -50μA
V
OH
High Level
Output Voltage
I
OH
= -4mA
I
OH
= -8mA
V
NEW PRODUCT
V
OL
Low Level
Output Voltage
I
OL
= 50μA
0.1
0.1
0.1
0.36
0.36
± 0.1
1
2.0
195
10
0.1
0.1
0.1
0.44
0.44
±1
10
10
0.1
0.1
0.1
0.55
0.55
±2
40
10
μA
μA
pF
V
3V
4.5V
0 to 5.5V
5.5V
5.5V
θ
JA
o
C/W
θ
JC
Note:
C/W
4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
Switching Characteristics
V
CC
= 3.3 V ± 0.3
(see Figure 1)
Parameter
t
pd
From
TO
(Input) (OUTPUT)
A
Y
C
L
=15pF
C
L
=50pF
Min
0.6
0.6
25ºC
Typ.
4.3
6.1
Max
7.1
10.6
-40ºC to 85ºC
Min
Max
0.6
0.6
8.5
12.0
-40ºC to 125ºC
Min
Max
0.6
0.6
11.0
14.5
Unit
ns
ns
V
CC
= 5 V ± 0.5V
(see Figure 1)
Parameter
t
pd
From
TO
(Input) (OUTPUT)
A
Y
C
L
=15pF
C
L
=50pF
Min
0.6
0.6
25ºC
Typ.
3.1
4.5
Max
5.5
7.5
-40ºC to 85ºC
Min
Max
0.6
0.6
6.5
8.5
-40ºC to 125ºC
Min
Max
0.6
0.6
7.0
9.5
Unit
ns
ns
74AHC1G04
Document number: DS35171 Rev. 1 - 2
4 of 8
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1G04
SINGLE INVERTER GATE
Operating Characteristics
T
A
= 25 ºC
Parameter
C
pd
Power dissipation capacitance
Test
Conditions
f = 1 MHz
No Load
V
CC
= 5V
Typ.
12
Unit
pF
NEW PRODUCT
Parameter Measurement Information
V
CC
3.3V±0.3V
5V±0.5V
3.3V±0.3V
5V±0.5V
Inputs
V
I
V
CC
V
CC
V
CC
V
CC
t
r
/t
f
≤3ns
≤3ns
≤3ns
≤3ns
V
M
V
CC
/2
V
CC
/2
V
CC
/2
V
CC
/2
C
L
15pF
15pF
50pF
50pF
Voltage Waveform Pulse Duration
Voltage Waveform Propagation Delay Times
Inverting and Non Inverting Outputs
Figure 1. Load Circuit and Voltage Waveforms
Notes:
A. Includes test lead and test apparatus capacitance.
B. All pulses are supplied at pulse repetition rate
≤
1 MHz.
C. Inputs are measured separately one transition per measurement.
D. t
PLH
and t
PHL
are the same as t
PD
.
5 of 8
www.diodes.com
March 2011
© Diodes Incorporated
74AHC1G04
Document number: DS35171 Rev. 1 - 2
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