A Product Line of
Diodes Incorporated
PAM2306D
DUAL HIGH-EFFICIENCY PWM STEP-DOWN DC-DC CONVERTER
Description
The PAM2306D is a dual step-down current mode, DC-DC converter.
At heavy load, the constant-frequency PWM control performs
excellent stability and transient response. To ensure the longest
battery life in portable applications, the PAM2306D provides a
powersaving Pulse-Skipping Modulation (PSM) mode to reduce
quiescent cur rent under light load operation.
The PAM2306D supports a range of input voltages from 2.5V to 5.5V,
allowing the use of a single Li+/Li-polymer cell, multiple Alkaline/NiMH
cell, USB, and other standard power sources. The dual output
voltages are available for adjustment. All versions employ internal
power switch and synchronous rectifier to minimize external part
count and realize high efficiency. During shutdown, the input is
disconnected from the output and the shutdown current is less than
0.1µA. Other key features include under-voltage lockout to prevent
deep battery discharge.
Pin Assignments
Features
Efficiency up to 96%
Only 40μA (Typ per Channel) Quiescent Current
Output Current: Up to 1A per Channel
Internal Synchronous Rectifier
1.5MHz Switching Frequency
Soft-Start
Under-Voltage Lockout
Short Circuit Protection
Thermal Shutdown
Small 12L WDFN3x3 Package
Pb-Free and RoHS Compliant
Applications
Cellular Phone
Portable Electronics
Personal Information Appliances
Wireless and DSL Modems
MP3 Players
Typical Applications Circuit
V
OUT
V
REF
1
Rx1
Rx 2
PAM2306D
Document number: DS36394 Rev. 2 - 2
1 of 12
www.diodes.com
December 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM2306D
Pin Descriptions
Pin Number
1
2
3, 9
Exposed Pad
4
5, 11
6
7
8
10
12
Pin Name
WDFN3x3-12L
VIN2
LX2
GND
FB1
NC1, NC2
EN1
VIN1
LX1
FB2
EN2
Function
Power Input of Channel 2.
Pin for Switching of Channel 2.
Ground. The exposed pad must be soldered to a large PCB and connected to GND for maximum
power dissipation.
Feedback of Channel 1.
No Connection
Chip Enable of Channel 1 (Active High). V
EN1
≤
V
IN1
.
Power Input of Channel 1.
Pin for Switching of Channel 1.
Feedback of Channel 2.
Chip Enable of Channel 2 (Active High). V
EN2
≤
V
IN2
.
Functional Block Diagram
PAM2306D
Document number: DS36394 Rev. 2 - 2
2 of 12
www.diodes.com
December 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM2306D
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
These are stress ratings only and functional operation is not implied. Exposure to absolute maximum ratings for prolonged time periods may affect device
reliability. All voltages are with respect to ground.
Parameter
Input Voltage
EN1, FB1, LX1, EN2, FB2 and LX2 Pin Voltage
Maximum Junction Temperature
Storage Temperature Range
Soldering Temperature
Rating
-0.3 to +6.5
-0.3 to (V
IN
+0.3)
150
-65 to +150
260, 10sec
Unit
V
V
°C
°C
°C
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Parameter
Supply Voltage
Ambient Temperature Range
Junction Temperature Range
Rating
2.5 to 5.5
-40 to +85
-40 to +125
Unit
V
°C
°C
Thermal Information
Parameter
Thermal Resistance (Junction to Ambient)
Thermal Resistance (Junction to Case)
Power Dissipation
Symbol
θ
JA
θ
JC
P
D
Package
W-DFN3x3-12
W-DFN3x3-12
W-DFN3x3-12
Maximum
60
8.5
1.66
Unit
°C/W
°C/W
W
Electrical Characteristics
(@T
A
= +25°C, V
IN
= 3.6V, V
O
= 1.8V, C
IN
= 10µF, C
O
= 10µF, L = 2.2µH, unless otherwise specified.)
Parameter
Input Voltage Range
Regulated Feedback Voltage
Reference Voltage Line Regulation
Regulated Output Voltage Accuracy
Peak Indictor Current
Output Voltage Line Regulation
Output Voltage Load Regulation
Quiescent Current (per channel)
Shutdown Current (per channel)
Oscillator Frequency
Drain-Source On-State Resistance
SW Leakage Current (per channel)
EN Threshold High
EN Threshold Low
EN Leakage Current
Over Temperature Protection
OTP Hysteresis
Symbol
V
IN
V
FB
∆V
FB
V
O
I
PK
LNR
LDR
I
Q
I
SD
f
OSC
R
DS(ON)
I
LSW
V
EH
V
EL
I
EN
OTP
OTH
±0.01
150
30
1.5
0.3
I
O
= 10mA
V
IN
= 3V, V
FB
= 0.5V or V
O
= 90%
V
IN
= 2.5V to 5V, I
O
= 10mA
I
O
= 1mA to 1A
No load
V
EN
= 0V
V
O
= 100%
V
FB
= 0V or V
O
= 0V
I
DS
= 100mA
P MOSFET
N MOSFET
1.2
-3
1.5
0.2
1.5
40
0.1
1.5
500
0.30
0.35
±0.01
0.45
0.50
1
70
1
1.8
0.5
Io = 100mA
Test Conditions
Min
2.5
0.588
0.6
0.3
+3
Typ
Max
5.5
0.612
Units
V
V
%/V
%
A
%/V
%
µA
µA
MHz
kHz
Ω
Ω
µA
V
V
µA
°C
°C
PAM2306D
Document number: DS36394 Rev. 2 - 2
3 of 12
www.diodes.com
December 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM2306D
Typical Performance Characteristics
(@T
A
= +25°C, C
IN
= 10µF, C
O
= 10µF, L = 4.7µH, unless otherwise specified.)
PAM2306D
Document number: DS36394 Rev. 2 - 2
4 of 12
www.diodes.com
December 2014
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PAM2306D
Typical Performance Characteristics
(cont.)
(@T
A
= +25°C, C
IN
= 10µF, C
O
= 10µF, L = 4.7µH, unless otherwise specified.)
PAM2306D
Document number: DS36394 Rev. 2 - 2
5 of 12
www.diodes.com
December 2014
© Diodes Incorporated
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
