74LVC08A
QUADRUPLE 2-INPUT AND GATES
Description
The 74LVC08A provides four independent 2-input AND gates. The
device is designed for operation with a power supply range of 1.65V
to 5.5V. The inputs are tolerant to 5.5V allowing this device to be
used in a mixed voltage environment. The device is fully specified for
partial power down applications using IOFF.
The IOFF circuitry
Pin Assignments
( Top View )
1A
1B
1Y
2A
2B
2Y
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Vcc
4B
4A
4Y
3B
3A
3Y
disables the output preventing damaging current backflow when the
device is powered down.
The gates perform the positive Boolean function:
Y
=
A
•
B
or
Y
=
A
+
B
GND
Features
•
•
•
•
•
•
•
Wide Supply Voltage Range from 1.65V to 5.5V
Sinks 24mA at V
CC
= 3.3V
CMOS low power consumption
IOFF Supports Partial-Power-Down Mode Operation
Inputs or outputs accept up to 5.5V
Inputs can be driven by 3.3V or 5.5V allowing for voltage
translation applications.
ESD Protection Exceeds JESD 22
200-V Machine Model (A115-A)
2000-V Human Body Model (A114-A)
Exceeds 1000-V Charged Device Model (C101C)
•
•
•
•
Latch-Up Exceeds 250 mA per JESD 78, Class II
Range of Package Options SO-14 and TSSOP-14
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Applications
•
•
•
•
Voltage Level Shifting
General Purpose Logic
Power Down Signal Isolation
Wide array of products such as:
PCs, networking, notebooks, ultrabooks, netbooks
Computer peripherals, hard drives, CD/DVD ROM
TV, DVD, DVR, set top box
74LVC08A
Document number: DS35261 Rev. 3 - 2
1 of 10
www.diodes.com
June 2012
© Diodes Incorporated
74LVC08A
Absolute Maximum Ratings
(Note 4) (@T
A
= +25°C, unless otherwise specified.)
Symbol
ESD HBM
ESD CDM
ESD MM
V
CC
V
I
V
O
V
O
I
IK
I
OK
I
O
I
CC
,
,
I
GND
T
J
T
STG
P
TOT
Note:
Description
Human Body Model ESD Protection
Charged Device Model ESD Protection
Machine Model ESD Protection
Supply Voltage Range
Input Voltage Range
Voltage applied to output in high impedance or I
OFF
state
Voltage applied to output in high or low state
Input Clamp Current
Output Clamp Current
V
I
< 0
V
O
< 0
Rating
2
1
200
-0.5 to 6.5
-0.5 to 6.5
-0.5 to 6.5
-0.3 to V
CC
+0.5
-50
-50
±50
±100
-40 to +150
-65 to +150
500
Unit
KV
KV
V
V
V
V
V
mA
mA
mA
mA
°C
°C
mW
Continuous output current
Continuous current through V
CC
or GND
Operating Junction Temperature
Storage Temperature
Total Power Dissipation
4. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device operation should
be within recommend values.
Recommended Operating Conditions
(Note 5) (@T
A
= +25°C, unless otherwise specified.)
Symbol
V
CC
V
I
V
O
Δt/ΔV
T
A
Notes:
Parameter
Supply Voltage
Input Voltage
Output Voltage
Input transition rise or fall rate
Operating free-air temperature
Active Mode
Conditions
Min
1.65
0
0
0
Max
5.5
5.5
V
CC
5.5
20
10
Unit
V
V
V
V
ns/V
°C
V
CC
= 0V; Power Down Mode
V
CC
= 1.65V to 2.7V
V
CC
= 2.7V to 5.5V
-40
+125
5. Unused inputs should be held at V
CC
or Ground.
74LVC08A
Document number: DS35261 Rev. 3 - 2
3 of 10
www.diodes.com
June 2012
© Diodes Incorporated
74LVC08A
Switching Characteristics
Test
Conditions
T
A
= +25°C
Min
Typ
Max
1.0
1.0
1.0
1.0
5.0
2.9
3.0
2.6
9.3
6.4
4.6
3.9
Symbol
Parameter
Propagation
Delay A
N
or B
N
to Y
N
Output Skew
Time
V
CC
1.65V to1.95V
2.3V to 2.7V
2.7V
3V to 3.6V
3V to 3.6V
-40°C to +85°C -40°C to +125°C
Min
Max
Min
Max
1.0
1.0
1.0
1.0
9.8
6.9
4.8
4.1
1.0
1.0
1.0
1.0
1.0
11.3
9.0
6.0
5.5
1.5
Unit
t
PD
Figure 1
ns
t
SK(0)
ns
Operating Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Parameter
C
pd
C
I
Power dissipation
capacitance per gate
Input Capacitance
Test
Conditions
f = 10 MHz
V
i
= V
CC
– or
GND
V
CC
= 1.8V
Typ
7.0
4
V
CC
= 2.5V
Typ
7.5
4
V
CC
= 3.3V
Typ
8.0
4
Unit
pF
pF
Package Characteristics
Symbol
θ
JA
Parameter
Thermal Resistance
Junction-to-Ambient
Thermal Resistance
Junction-to-Case
Test Conditions
SO-14
TSSOP-14
SO-14
V
CC
(Note 6)
Min
Typ
TBD
159
TBD
Max
Unit
o
C/W
θ
JC
Note:
(Note 6)
TSSOP-14
25
o
C/W
6. Test condition for SO-14 and TSSOP-14: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
74LVC08A
Document number: DS35261 Rev. 3 - 2
5 of 10
www.diodes.com
June 2012
© Diodes Incorporated
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