Green
ZVP0545G
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Features and Benefits
450 Volt V
DS
R
DS(ON)
= 150Ω
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
SOT223
D
G
S
Top View
Pin Out - Top
View
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZVP0545GTA
Notes:
Marking
ZVP0545
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT223
ZVN
ZVP
0545
4310
ZVP0545 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01 to 53)
YWW
ZVP0545G
Document number: DS33390 Rev. 5 - 2
1 of 7
www.diodes.com
November 2015
© Diodes Incorporated
ZVP0545G
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
-450
±20
-75
-150
Unit
V
V
mA
mA
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation
Operating and Storage Temperature Range
Symbol
P
D
T
J
,
T
STG
Value
2
-55 to +150
Unit
W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
I
D(ON)
V
GS(TH)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-450
-
-
-100
-1.5
-
40
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-20
-2
20
-
-4.5
150
-
120
20
5
10
15
15
20
Unit
V
µA
mA
nA
mA
V
Ω
mS
pF
pF
pF
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 1mA
V
DS
= -450V, V
GS
= 0V
V
DS
= -360V, V
GS
= 0V,
T
A
= +125° (Note 6)
C
V
GS
= ±20V, V
DS
= 0V
V
GS
= -10V, V
DS
= -25V
V
DS
= V
GS
, I
D
= -1mA
V
GS
= -10V, I
D
= -50mA
V
DS
= -25V, I
D
= -50mA
Zero Gate Voltage Drain Current (T
J
= +25°
C)
Gate-Source Leakage
On-State Drain Current (Note 5)
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)(Note 6)
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time (Note 7)
Turn-On Rise Time (Note 7)
Turn-Off Delay Time (Note 7)
Turn-Off Fall Time (Note 7)
Notes:
V
DS
= -25V, V
GS
= 0V, f = 1.0MHz
V
DD
= -25V, I
D
= -50mA
5. Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%.
6. Sample test.
7. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
ZVP0545G
Document number: DS33390 Rev. 5 - 2
2 of 7
www.diodes.com
November 2015
© Diodes Incorporated
ZVP0545G
0.12
V
DS
=-50V
0.3
25℃
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
0.09
85℃
V
GS
=-8.0V
0.2
V
GS
=-10V
125℃
150℃
0.06
-55℃
V
GS
=-5.0V
0.1
V
GS
=-4.5V
V
GS
=-4.0V
V
GS
=-3.5V
0.0
0
10
20
30
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
50
0.03
0
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
180
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
200
300
260
160
220
140
180
120
V
GS
=-10V
100
140
I
D
=-50mA
80
0
0.05
0.1
0.15
0.2
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current and
Gate Voltage
100
0
4
8
12
16
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS
=-10V
250
150℃
125℃
200
85℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
300
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
V
GS
=-10V, I
D
=-50mA
150
25℃
100
50
-55℃
0
0.06
0.09
0.12
0.15
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Junction Temperature
0
0.03
-50
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
Figure 6. On-Resistance Variation with Junction
Temperature
November 2015
© Diodes Incorporated
ZVP0545G
Document number: DS33390 Rev. 5 - 2
3 of 7
www.diodes.com
ZVP0545G
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
300
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
3.4
250
3.2
I
D
=-1mA
200
V
GS
=-10V, I
D
=-50mA
3
150
2.8
I
D
=-250µA
2.6
100
50
2.4
0
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
-25
2.2
-50
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs Junction
Temperature
-25
0.2
V
GS
=0V
10000
150℃
1000
125℃
100
85℃
10
25℃
1
I
S
, SOURCE CURRENT (A)
0.16
0.12
0.08
T
J
=150℃
T
J
=125℃
0
0
T
J
=85℃
T
J
=25℃
T
J
=-55℃
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs Current
1.5
0.04
I
DSS
, LEAKAGE CURRENT (nA)
0.1
0
90
180
270
360
450
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakge Current vs
Voltage
100
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
I
D
, DRAIN CURRENT (A)
1
R
DS(ON)
Limited
P
W
=1ms
P
W
=100μs
0.1
10
C
oss
DC
0.01
P
W
=10s
P
W
=1s
T
J(Max)
=150℃
P
W
=100ms
T
C
=25℃
V
GS
=4.5V
P
W
=10ms
Single Pulse
DUT on 1*MRP Board
1
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
1000
C
rss
1
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
30
0.001
ZVP0545G
Document number: DS33390 Rev. 5 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated
ZVP0545G
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.9
D=0.3
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
R
θJA
(t)=r(t) * R
θJA
R
θJA
=114℃/W
Duty Cycle, D=t1 / t2
D=0.5
D=0.7
ZVP0545G
Document number: DS33390 Rev. 5 - 2
5 of 7
www.diodes.com
November 2015
© Diodes Incorporated
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