SOT23 NPN SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 1 – NOVEMBER 1997
FEATURES
Very low equivalent on-resistance;
R
CE(sat)
=140mΩ at 1.25A
COMPLEMENTARY TYPE –
PARTMARKING DETAIL –
FMMTL718
L68
FMMTL618
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
:T
stg
VALUE
60
20
5
1.25
4
200
500
-55 to +150
UNIT
V
V
V
A
A
mA
mW
°C
FMMTL618
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
MIN.
60
20
5
TYP.
105
30
8.5
10
10
10
18
80
130
170
260
1000
850
200
300
250
200
100
50
400
440
400
300
190
100
195
9
72
388
12
MHz
pF
ns
ns
35
160
200
280
350
1100
1000
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
CONDITIONS.
I
C
=100µA
I
C
=10mA*
I
E
=100µA
V
CB
=16V
V
EB
=4V
V
CE
=16V
I
C
=100mA, I
B
=10mA*
I
C
=500mA, I
B
=25mA*
I
C
=1A, I
B
=100mA*
I
C
=1.25A, IB=100mA*
I
C
=2A, I
B
=200mA*
I
C
=1.25A, I
B
=100mA*
I
C
=1.25A, V
CE
=2V*
I
C
=10mA, V
CE
=2V
I
C
=200mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=50mA, V
CE
=10V
f=100MHz
V
CB
=10V, f=1MHz
I
C
=1A, V
CC
=10V
I
B1
=-I
B2
=10mA
Collector Cut-Off Current I
CBO
Emitter Cut-Off Current
I
EBO
V
CE(sat)
Collector Cut-Off Current I
CES
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Collector-Base
Breakdown Voltage
Switching times
f
T
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
FMMTL618
TYPICAL CHARACTERISTICS
+25°C
IC/IB=10
300m
300m
V
CE(sat)
- (V)
V
CE(sat)
- (V)
200m
IC/IB=10
IC/IB=20
IC/IB=50
200m
-55°C
+25°C
+100°C
100m
100m
0
1mA
0
10mA
100mA
1A
I
C
- Collector Current (A)
10A
1m
10m
100m
1A
10A
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
600
VCE=2V
1.0
0.8
IC/IB=10
h
FE
- Typical Gain
V
BE(sat)
- (V)
0.6
0.4
0.2
0
1mA
-55°C
+25°C
+100°C
300
+100°C
+25°C
-55°C
0
1mA
10mA
100mA
1A
I
C
- Collector Current (A)
10A
10mA
100mA
1A
I
C
- Collector Current (A)
10A
h
FE
v I
C
V
BE(sat)
v I
C
1.0
VCE=2V
10A
0.8
I
C
- Collector Current (A)
V
BE(on)
- (V)
1A
DC
1s
100ms
10ms
1ms
100us
0.6
0.4
0.2
0
1mA
-55°C
+25°C
+100°C
100m
10mA
100mA
1A
10A
10m
100m
1
10
100
IC - Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
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