DMP2165UW
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-20V
R
DS(ON)
max
90mΩ @V
GS
= -4.5V
120mΩ @V
GS
= -2.5V
I
D
max
T
A
= +25°
C
-2.5A
-2.0A
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
Case: SOT323
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
e3
Weight: 0.006 grams (Approximate)
Applications
Motor Control
Power Management Functions
Backlighting
D
SOT323
D
G
G
S
S
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMP2165UW-7
DMP2165UW-13
Notes:
Case
SOT323
SOT323
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
U65
U65 = Product Type Marking Code
YM or YM = Date Code Marking for SAT
Y or Y = Year (ex: F = 2018)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
Jan
1
2017
E
Feb
2
2018
F
Mar
3
2019
G
Apr
4
YM
2020
H
May
5
Jun
6
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
Oct
O
2024
L
Nov
N
2025
M
Dec
D
DMP2165UW
Document number: DS40439 Rev. 2 - 2
1 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMP2165UW
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
T
A
= +25°
C
Steady
State
T
A
= +70°
C
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6)
Continuous Drain Current (Note 6) V
GS
= -4.5V
Symbol
V
DSS
V
GSS
I
D
I
S
I
DM
Value
-20
±12
-2.5
-2.0
-1.0
-15
Unit
V
V
A
A
A
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
0.5
259
0.7
175
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
G
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-20
-0.4
—
—
—-
Typ
—
63
83
160
-0.7
335
72
32
15.5
3.5
0.4
1.1
3.7
8.7
17.8
8
9
1.5
Max
-1.0
±100
-1.0
90
120
180
-1.1
—
—
Unit
V
µA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -20V, V
GS
= 0V
V
GS
= ±12V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -2.5V, I
D
= -1.2A
V
GS
= -1.8V, I
D
= -1.2A
V
GS
= 0V, I
S
= -1A
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
V
GS
= 0V, V
DS
= 0V, f = 1.0MHz
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -3.5A
T
J
= +25°
C
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
V
DS
= -4V, V
GS
= -4.5V,
R
G
= 6, I
D
= -1A
I
F
= -4A, di/dt = 100A/μs
I
F
= -4A, di/dt = 100A/μs
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2165UW
Document number: DS40439 Rev. 2 - 2
2 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMP2165UW
10.0
V
GS
= -2.5V
V
GS
= -3.0V
V
GS
= -4.5V
V
GS
= -10V
V
GS
= -2.0V
6.0
10
V
DS
= -5V
8
I
D
, DRAIN CURRENT (A)
8.0
I
D
, DRAIN CURRENT (A)
6
4.0
V
GS
= -1.7V
4
2.0
V
GS
= -1.5V
V
GS
= -1.3V
2
T
J
= 150℃
T
J
= 125℃
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
1.5
2
2.5
3
0.0
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.24
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.22
0.2
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
2
4
6
8
10
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current
and Gate Voltage
V
GS
= -4.5V
V
GS
= -2.5V
V
GS
= -1.8V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0
0
0.5
1
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.5
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
2
4
6
8
10
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
12
I
D
= -1.5A
I
D
= -1.2A
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.12
T
J
= 125℃
0.1
T
J
= 150℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS
= -4.5V
1.8
1.6
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -2.5V, I
D
= -1.2A
1.4
0.08
T
J
= 85℃
1.2
0.06
T
J
= 25℃
1
V
GS
= -1.8V, I
D
= -1.2A
0.04
T
J
= -55℃
0.8
0.02
0
4
6
8
10
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current
and Junction Temperature
2
0.6
-50
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Junction
Temperature
-25
150
DMP2165UW
Document number: DS40439 Rev. 2 - 2
3 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMP2165UW
0.2
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.18
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
1000
V
GS
= 0V
8
I
S
, SOURCE CURRENT (A)
C
T
, JUNCTION CAPACITANCE (pF)
C
iss
f = 1MHz
V
GS
= -4.5V, I
D
= -1.5A
V
GS
= -2.5V, I
D
= -1.2A
V
GS
= -1.8V, I
D
= -1.2A
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
1
0.8
I
D
= -1mA
0.6
I
D
= -250μA
0.4
0.2
-50
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
-25
150
10
6
C
oss
100
4
2
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
T
J
= 25
o
C
T
J
= -55
o
C
C
rss
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
10
0
2
4
6
8
10 12 14 16 18
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
P
W
= 1ms
P
W
= 10ms
P
W
= 100µs
20
100
R
DS(ON)
Limited
8
I
D
, DRAIN CURRENT (A)
10
P
W
= 100ms
6
V
GS
(V)
1
4
V
DS
= -4.0V, I
D
= -3.5A
2
0.1
0
0
1
2
3
4
5
Q
g
(nC)
6
7
8
0.01
T
J(Max)
= 150℃
T
C
= 25℃
P
W
= 1s
Single Pulse
DUT on
P
W
= 10s
1*MRP Board
V
GS
= -4.5V
0.1
DC
100
Figure 11. Gate Charge
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
DMP2165UW
Document number: DS40439 Rev. 2 - 2
4 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMP2165UW
1
D=0.7
D=0.5
D=0.3
r(t), TRANSIENT THERMAL RESISTANCE
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 258℃/W
Duty Cycle, D = t1 / t2
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
10000 100000 1000000
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMP2165UW
Document number: DS40439 Rev. 2 - 2
5 of 7
www.diodes.com
February 2018
© Diodes Incorporated
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