DMN2004K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
20V
R
DS(ON)
0.55Ω @ V
GS
= 4.5V
0.9Ω @ V
GS
= 1.8V
I
D
T
A
= +25°C
630mA
410mA
Features and Benefits
Low On-Resistance: R
DS(ON)
= 550
(max)
mΩ @ V
GS
= 4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2KV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(ON)
) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
SOT23
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
e3
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
Drain
Applications
DC-DC Converters
Power Management Functions
D
Gate
ESD PROTECTED TO 2kV
Gate
Protection
Diode
Source
G
S
Top View
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMN2004K-7
Notes:
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or
Y
= Year (ex: A = 2013)
M = Month (ex: 9 = September)
NAB
YM
NAB
Chengdu A/T Site
Date Code Key
Year
Code
Month
Code
Shanghai A/T Site
2008
V
Jan
1
Feb
2
2009
W
Mar
3
YM
2010
X
Apr
4
May
5
2011
Y
Jun
6
2012
Z
Jul
7
Aug
8
2013
A
Sep
9
2014
B
Oct
O
Nov
N
2015
C
Dec
D
July 2013
© Diodes Incorporated
DMN2004K
Document number: DS30938 Rev. 9 - 2
1 of 6
www.diodes.com
DMN2004K
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) V
GS
= 4.5V
Drain Current (Note 5) V
GS
= 1.8V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T
A
= +25°C
T
A
= +85°C
T
A
= +25°C
T
A
= +85°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
Value
20
±8
630
450
410
300
1.5
Units
V
V
mA
mA
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
θJA
T
J,
T
STG
Value
350
357
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Source Current
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
|Y
fs
|
I
S
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
20
0.5
200
0.6
Typ
0.4
0.5
0.7
292
0.9
0.2
0.2
5.7
8.4
59.4
37.6
5.5
0.85
Max
1
1
1.0
0.55
0.70
0.9
0.5
1
150
25
20
Unit
V
µA
µA
V
Ω
ms
A
V
pF
pF
pF
Ω
nC
Test Condition
V
GS
= 0V, I
D
= 10µA
V
DS
= 16V, V
GS
= 0V
V
GS
=
4.5V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
=10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 500mA
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, V
GS
= 4.5V, I
D
= 0.5A
ns
V
GS
= 8V, V
DS
= 15V,
R
G
= 6
, R
L
= 30
I
S
= 0.5A, dI/dt = -100A/µs
I
S
= 0.5A, dI/dt = -100A/µs
ns
nC
5. Device mounted on FR-4 PCB, with minimum recommended pad layout, single sided.
6. Pulse width
≤10µS,
Duty Cycle
≤1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN2004K
Document number: DS30938 Rev. 9 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004K
0.9
V
GS
= 2.2V
V
GS
= 2.0V
1,000
900
800
V
DS
= 10V
Pulsed
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (mA)
V
GS
= 1.8V
0.6
700
600
500
400
300
200
100
T
A
= 150
°
C
T
A
= 85
°
C
V
GS
= 1.6V
0.3
V
GS
= 1.4V
V
GS
= 1.2V
T
A
= 25
°
C
T
A
= -55
°
C
0
0
1
2
3
4
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
0.8
1.2
2
1.6
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2
Reverse Drain Current vs. Source-Drain Voltage
1
V
GS
= 10V
Pulsed
0
0.4
1
V
GS(th),
GATE THRESHOLD VOLTAGE (V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-75
-50 -25
0
25 50 75 100 125 150
T
ch
, CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage
vs. Channel Temperature
V
DS
= 10V
I
D
= 1mA
Pulsed
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
0.5
T
A
= 125
°
C
T
A
= 150
°
C
T
A
= 85
°
C
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 0
°
C
T
A
= -25
°
C
0.1
0.2
0.4
0.6
0.8
I
D,
DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance
vs. Drain Current
T
A
= 25°C
1.0
1
V
GS
= 5V
Pulsed
1.0
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
) (NORMALIZED)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
2
4
6
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source, On-Resistance
vs. Gate-Source Voltage
I
D
= 540mA
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
0.5
T
A
= 150
°
C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= -55
°
C
T
A
= 25
°
C
T
A
= 0
°
C
T
A
= -25
°
C
0.1
0.2
0.6
1.0
0.8
0.4
I
D
, DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance
vs. Drain Current
DMN2004K
Document number: DS30938 Rev. 9 - 2
3 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004K
1
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
) (NORMALIZED)
0.5
T
J
= 25°C
0.9
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.4
V
GS
= 4.5V,
I
D
= 540mA
V
GS
= 1.8V
0.3
0.2
V
GS
= 10V,
I
D
= 280mA
V
GS
= 2.5V
V
GS
= 4.5V
0.1
0.4
0.8
1
1.2
0.6
I
D
, DRAIN CURRENT (A)
Figure 7
On-Resistance vs. Drain Current and Gate Voltage
0
I
DSS
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
10,000
0.2
-25
50
0
25
75 100 125 150
T
j
, JUNCTION TEMPERATURE (
°
C)
Figure 8
Static Drain-Source, On-Resistance vs. Temperature
0
-50
1
V
GS
= 0V
1,000
TJ = 150°C
I
DR
, REVERSE DRAIN CURRENT (A)
T
A
= 150
°
C
0.1
100
TJ = 100°C
T
A
= 125
°
C
T
A
= 85
°
C
T
A
= 25
°
C
10
0.01
T
A
= 0
°
C
T
A
= -25
°
C
T
A
= -55
°
C
1
T
J
= 25 °C
0.1
2
18 20
10 12 14 16
6
8
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Drain Source Leakage Current vs. Voltage
4
T
A
= -55
°
C
0.001
1
0.5
V
SD
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Reverse Drain Current vs. Source-Drain Voltage
0
120
|Y
fs
|, FORWARD TRANSFER ADMITTANCE (S)
1
V
GS
= 10V
f = 1MHz
V
GS
= 0V
100
T
A
= 25
°
C
C
T
, CAPACITANCE (pF)
C
iss
80
0.1
T
A
= 85
°
C
60
40
C
oss
T
A
= 150
°
C
20
C
rss
0.01
1
10
1,000
100
I
D
, DRAIN CURRENT (mA)
Figure 11 Forward Transfer Admittance vs. Drain Current
0
0
2
4
8 10 12 14 16 18
6
V
DS
, DRAIN SOURCE VOLTAGE (V)
Figure 12 Capacitance Variation
20
DMN2004K
Document number: DS30938 Rev. 9 - 2
4 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMN2004K
1
10
V
GS
, GATE-SOURCE VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
8
0.1
T
A
= 25°C
6
V
DS
= 15V
I
D
= 0.5A
4
0.01
2
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 13 Diode Forward Voltage vs. Current
0
0
0.5
1
1.5
2
2.5
Q
g
, TOTAL GATE CHARGE (nC)
Figure 14 Gate-Charge Characteristics
3
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
D
J
F
G
L
M
K1
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
-
-
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°
-
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
DMN2004K
Document number: DS30938 Rev. 9 - 2
5 of 6
www.diodes.com
July 2013
© Diodes Incorporated
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
