SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
FEATURES
* 60Volt V
DS
* R
DS(ON)
= 5Ω
BS170F
S
D
G
PARTMARKING DETAIL – MV
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
60
0.15
3
±
20
330
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Turn-On Delay Time (2)(3)
Turn-Off Delay Time (2)(3)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
t
d(on)
t
d(off)
200
60
10
10
MIN. TYP. MAX. UNIT CONDITIONS.
60
0.8
90
3
10
0.5
5
V
V
nA
µA
Ω
mS
pF
ns
ns
I
D
=100µA, V
GS
=0V
I
D
=1mA, V
DS
= V
GS
V
GS
=15V, V
DS
=0V
V
DS
=25V, V
GS
=0V
V
GS
=10V, I
D
=200mA
V
DS
=10V, I
D
=200mA
V
DS
=10V, V
GS
=0V,
f=1MHz
V
DD
≈-15V,
I
D
=600mA
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤2%
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs refer to ZVN3306F datasheet.
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