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FM25V05-GTR

产品描述存储器接口类型:SPI 存储器容量:512Kb (64K x 8) 工作电压:2V ~ 3.6V 存储器类型:Non-Volatile 512-Kbit(64K × 8bit),SPI接口,工作电压:2.0V to 3.6V
产品类别存储    FRAM存储器   
文件大小772KB,共22页
制造商Cypress(赛普拉斯)
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FM25V05-GTR概述

存储器接口类型:SPI 存储器容量:512Kb (64K x 8) 工作电压:2V ~ 3.6V 存储器类型:Non-Volatile 512-Kbit(64K × 8bit),SPI接口,工作电压:2.0V to 3.6V

FM25V05-GTR规格参数

参数名称属性值
存储器构架(格式)FRAM
存储器接口类型SPI
存储器容量512Kb (64K x 8)
工作电压2V ~ 3.6V
存储器类型Non-Volatile

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FM25V05
512-Kbit (64 K × 8) Serial (SPI) F-RAM
512-Kbit (64 K × 8) Serial (SPI) F-RAM
Features
Functional Description
The FM25V05 is a 512-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by serial flash, EEPROM, and other
nonvolatile memories.
Unlike serial flash and EEPROM, the FM25V05 performs write
operations at bus speed. No write delays are incurred. Data is
written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared with other
nonvolatile memories. The FM25V05 is capable of supporting
10
14
read/write cycles, or 100 million times more write cycles
than EEPROM.
These capabilities make the FM25V05 ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The FM25V05 provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
FM25V05 uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
512-Kbit ferroelectric random access memory (F-RAM)
logically organized as 64 K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300
A
active current at 1 MHz
90
A
(typ) standby current
5
A
sleep mode current
Low-voltage operation: V
DD
= 2.0 V to 3.6 V
Industrial temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
WP
CS
HOLD
SCK
Instruction Decoder
Clock Generator
Control Logic
Write Protect
64 K x 8
F-RAM Array
Instruction Register
Address Register
Counter
SI
16
8
Data
I/
O Register
3
Nonvolatile Status
Register
SO
Cypress Semiconductor Corporation
Document Number: 001-84497 Rev. *F
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised December 2, 2015

 
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