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FM24V05-GTR

产品描述存储器接口类型:I2C 存储器容量:512Kb (64K x 8) 工作电压:2V ~ 3.6V 存储器类型:Non-Volatile 512-Kbit(64K × 8bit),I2C接口,工作电压:2.0V to 5.6V
产品类别存储    FRAM存储器   
文件大小511KB,共21页
制造商Cypress(赛普拉斯)
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FM24V05-GTR概述

存储器接口类型:I2C 存储器容量:512Kb (64K x 8) 工作电压:2V ~ 3.6V 存储器类型:Non-Volatile 512-Kbit(64K × 8bit),I2C接口,工作电压:2.0V to 5.6V

FM24V05-GTR规格参数

参数名称属性值
存储器构架(格式)FRAM
存储器接口类型I2C
存储器容量512Kb (64K x 8)
工作电压2V ~ 3.6V
存储器类型Non-Volatile

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FM24V05
512-Kbit (64 K × 8) Serial (I
2
C) F-RAM
512-Kbit (64 K × 8) Serial (I
2
C) F-RAM
Features
Functional Description
The FM24V05 is a 512-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the FM24V05 performs write operations at bus
speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The FM24V05 is
capable of supporting 10
14
read/write cycles, or 100 million times
more write cycles than EEPROM.
These capabilities make the FM24V05 ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The FM24V05 provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
incorporates a read-only Device ID that allows the host to
determine the manufacturer, product density, and product
revision. The device specifications are guaranteed over an
industrial temperature range of –40
C
to +85
C.
For a complete list of related documentation, click
here.
512-Kbit ferroelectric random access memory (F-RAM)
logically organized as 64 K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I
2
C)
Up to 3.4-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175
A
active current at 100 kHz
90
A
(typ) standby current
5
A
(typ) sleep mode current
Low-voltage operation: V
DD
= 2.0 V to 3.6 V
Industrial temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
16
64 K x 8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
8
SCL
WP
A2-A0
Control Logic
Device ID and
Manufacturer ID
Errata:
STOP condition is optional for sleep mode entry. For more information, see
Errata on page 18.
Details include errata trigger conditions, scope of impact, available
workarounds, and silicon revision applicability.
Cypress Semiconductor Corporation
Document Number: 001-84462 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised August 6, 2015
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