CT184GB
Input 4-Pin Mini-Flat Phototransistor Optocoupler
Features
High isolation 3750 V
RMS
Multiple CTR selection available
Creepage distance ≥5mm
Operating temperature range - 55 °C to 110 °C
Green Package
Regulatory Approvals
UL - UL1577 (Pending Approval)
VDE - EN60747-5-5 (Pending Approval)
CQC – GB4943.1, GB8898 (Pending Approval)
IEC60065, IEC60950 (Pending Approval)
Description
The CT184GB of AC input optocoupler consists of a
photo transistor optically coupled to two gallium
arsenide Infrared-emitting diodes in a 4-lead
Mini-Flat package.
Applications
DC-DC Converters
Programmable controllers
Telecommunication equipment
Hybrid substrates that require high density
mounting
Package Outline
Schematic
CT184
CT Micro
Proprietary & Confidential
Page 1
Rev 1
Jun, 2018
CT184GB
Input 4-Pin Mini-Flat Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
P
TOT
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Total power dissipation
Parameters
Ratings
3750
-55 ~ +110
-55 ~ +150
260
200
Units
V
RMS
o
C
o
C
o
C
Notes
mW
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1μs P.W,300pps)
50
1
6
70
mA
A
V
mW
Detector
P
C
B
VCEO
B
VECO
I
C
Power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
80
7
50
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 1
Jun, 2018
CT184GB
Input 4-Pin Mini-Flat Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25°C (unless otherwise specified)
Test Conditions
I
F
= ±10 mA
V
R
= 5V
f= 1MHz
Min
-
-
-
Typ
1.24
-
10
Max
1.4
5
250
Units
V
µA
pF
Notes
Detector Characteristics
Symbol
B
VCEO
B
VECO
I
CEO
C
CE
Collector-Emitter Capacitance
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CE
= 48V
V
CE
= 48V, T
A
=85
o
C
f= 1MHz
Min
80
7
-
-
-
Typ
-
-
0.01
2
10
Max
-
-
0.08
50
-
Units
V
V
µA
µA
pF
Notes
Transfer Characteristics
Symbol
CTR
Parameters
Current Transfer Ratio
I
F
= 1mA, V
CE
= 0.4V
CTR Symmetry
Collector-Emitter Saturation
I
F
= ±5mA, V
CE
= 5V
I
F
=
±
8mA, I
C
= 2.4mA
Voltage
Off-state collector current
V
CE
= 48V, V
F
=0.7V
30
0.5
-
-
-
-
-
1
-
2
0.4
10
V
µA
%
Test Conditions
I
F
=
±
5mA, V
CE
= 5V
Min
100
Typ
-
Max
400
Units
%
Notes
V
CE(SAT)
I
C(off)
CT Micro
Proprietary & Confidential
Page 3
Rev 1
Jun, 2018
CT184GB
Input 4-Pin Mini-Flat Phototransistor Optocoupler
Isolation Characteristics
Symbol
R
IO
C
IO
Parameters
Isolation Resistance
Isolation Capacitance
Test Conditions
V
IO
= 500V
DC
f=1MHz
AC, 60s
Min
1x10
12
-
3750
-
-
Typ
10
14
0.5
-
10000
10000
Max
-
-
-
-
-
Units
Ω
pF
Notes
V
ISO
Isolation voltage
AC, 1s in oil
DC, 60s in oil
Vrms
Switching Characteristics
Symbol
t
r
t
f
t
on
t
off
t
on
t
s
t
off
Rise Time
Fall Time
Turn-on time
Turn-off time
Turn-on time
V
CC
= 5V, I
F
= 16mA,
Storage time
R
L
= 1.9kΩ
Turn-off time
-
70
-
-
30
-
V
CC
= 10V, I
C
= 2mA,
R
L
= 100Ω
Parameters
Test Conditions
Min
-
-
-
-
-
Typ
5
9
9
9
2
Max
-
-
-
-
-
Units
Notes
µs
CT Micro
Proprietary & Confidential
Page 4
Rev 1
Jun, 2018
CT184GB
Input 4-Pin Mini-Flat Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 1
Jun, 2018
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