CT1010-W, CT1011-W, CT1012-W, CT1013-W, CT1014-W
CT1015-W, CT1016-W, CT1017-W, CT1018-W, CT1019-W
DC Input 4-Pin Long Mini-Flat Phototransistor Optoco
upler
Features
•
•
•
•
•
•
•
•
•
•
High isolation 5000 VRMS
CTR flexibility available see order information
Extra low coupling capacitance
DC input with transistor output
Temperature range - 55 °C to 125 °C
External creepage distance > 8 mm
Internal creepage distance > 4.6 mm
Distances through insulation > 0.4 mm
Green Package
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Applications
•
•
•
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The CT1010-W, CT1011-W, CT1012-W, CT1013-W,
CT1014-W, CT1015-W, CT1016-W, CT1017-W,
CT1018-W, CT1019-W consists of a photo transistor
optically coupled to a gallium arsenide Infrared-
emitting diode in a 4-lead SOP Package.
Package Outline
Schematic
CT Micro
Proprietary & Confidential
Page 1
Rev 3
Dec, 2017
CT1010-W, CT1011-W, CT1012-W, CT1013-W, CT1014-W
CT1015-W, CT1016-W, CT1017-W, CT1018-W, CT1019-W
DC Input 4-Pin Long Mini-Flat Phototransistor Optoco
upler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Parameters
Ratings
5000
-55 ~ +125
-55 ~ +150
260
Units
V
RMS
o
C
o
C
o
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1μs P.W,300pps)
50
1
6
85
mA
A
V
mW
Detector
P
C
B
VCEO
B
VECO
I
C
Power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
80
7
50
mW
V
V
mA
Thermal Characteristics
Symbol
R
ӨJA
T
J
Parameters
Thermal Resistance Junction-Ambient
Junction temperature
Ratings
445
125
Units
℃/W
℃
Notes
CT Micro
Proprietary & Confidential
Page 2
Rev 3
Dec, 2017
CT1010-W, CT1011-W, CT1012-W, CT1013-W, CT1014-W
CT1015-W, CT1016-W, CT1017-W, CT1018-W, CT1019-W
DC Input 4-Pin Long Mini-Flat Phototransistor Optoco
upler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25°C (unless otherwise specified)
Test Conditions
I
F
=10mA
I
F
=50mA
V
R
= 6V
f= 1kHz
Min
Typ
1.26
Max
1.4
1.5
5
-
Units
V
V
µA
pF
Notes
-
-
-
1.42
-
45
Detector Characteristics
Symbol
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CE
= 20V, I
F
= 0mA
Min
80
7
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
B
VCEO
B
VECO
I
CEO
Transfer Characteristics
Symbol
Parameters
CT1012-W
CT1013-W
CT1014-W
CT1011-W
CT1012-W
Current Transfer
CT1013-W
CT1014-W
CT1010-W
CT1015-W
CT1016-W
CT1017-W
CT1018-W
CT1019-W
Collector-Emitter Saturation
I
F
= 5mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 5V
I
F
= 1mA, V
CE
= 5V
Test Conditions
Min
22
34
56
60
63
100
160
50
50
100
80
130
200
I
F
= 10mA, I
C
= 1mA
V
IO
= 500V
DC
f= 1MHz
-
5x10
10
1
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
-
-
-
300
125
200
320
600
150
300
160
260
400
0.4
V
Ω
pF
%
Units
Notes
CTR
Ratio
V
CE(SAT)
R
IO
C
IO
Voltage
Isolation Resistance
Isolation Capacitance
CT Micro
Proprietary & Confidential
Page 3
Rev 3
Dec, 2017
CT1010-W, CT1011-W, CT1012-W, CT1013-W, CT1014-W
CT1015-W, CT1016-W, CT1017-W, CT1018-W, CT1019-W
DC Input 4-Pin Long Mini-Flat Phototransistor Optoco
upler
Electrical Characteristics
T
Switching Characteristics
Symbol
T
ON
T
OFF
t
r
t
f
Parameters
Turn On Time
Turn Off Time
Rise Time
Fall Time
A
= 25°C, V
CC
= 5V (unless otherwise specified)
Test Conditions
Min
-
Typ
4.8
4.2
2.7
4
Max
22
22
18
18
Units
Notes
I
C
= 5mA, V
CE
= 5V, R
L
= 100Ω
-
-
-
µs
CT Micro
Proprietary & Confidential
Page 4
Rev 3
Dec, 2017
CT1010-W, CT1011-W, CT1012-W, CT1013-W, CT1014-W
CT1015-W, CT1016-W, CT1017-W, CT1018-W, CT1019-W
DC Input 4-Pin Long Mini-Flat Phototransistor Optoco
upler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 3
Dec, 2017
PCB设计
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