CT357 Series
DC Input 4-Pin Mini-Flat Phototransistor Optocoupler
Features
High isolation 3750 V
RMS
Multiple CTR selection available
DC input with transistor output
Creepage distance ≥5mm
Operating temperature range - 55 °C to 110 °C
Green Package
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
These series of general purpose optocoupler
consists of a photo transistor optically coupled to a
gallium arsenide Infrared-emitting diode in a 4-lead
Mini-Flat package.
Applications
DC-DC Converters
Programmable controllers
Telecommunication equipment
Hybrid substrates that require high density
mounting
Package Outline
Schematic
CT Micro
Proprietary & Confidential
Page 1
Rev 5
Dec, 2016
CT357 Series
DC Input 4-Pin Mini-Flat Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
P
TOT
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Total power dissipation
Parameters
Ratings
3750
-55 ~ +110
-55 ~ +150
260
200
Units
V
RMS
o
C
o
C
o
C
Notes
mW
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1μs P.W,300pps)
50
1
6
70
mA
A
V
mW
Detector
P
C
B
VCEO
B
VECO
I
C
Power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
80
6
50
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 5
Dec, 2016
CT357 Series
DC Input 4-Pin Mini-Flat Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25°C (unless otherwise specified)
Test Conditions
I
F
=10mA
V
R
= 6V
f= 1MHz
Min
-
-
-
Typ
1.24
-
10
Max
1.4
5
250
Units
V
µA
pF
Notes
Detector Characteristics
Symbol
B
VCEO
B
VECO
I
CEO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 1mA
V
CE
= 20V, I
F
=0mA
Min
80
7
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
Transfer Characteristics
Symbol
Parameters
CT357
CT357A
Test Conditions
Min
50
80
Typ
-
-
-
-
-
0.06
-
0.5
Max
600
160
260
400
600
0.2
-
1
Units
Notes
CTR
Current Transfer Ratio
CT357B
CT357C
CT357D
I
F
= 5mA, V
CE
= 5V
130
200
300
%
Collector-Emitter Saturation
V
CE(SAT)
Voltage
I
F
= 20mA, I
C
= 1mA
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
-
5x10
10
-
V
Ω
pF
R
IO
C
IO
Switching Characteristics
Symbol
t
r
t
f
Rise Time
I
C
= 2mA, V
CE
= 2V, R
L
= 100Ω
Fall Time
-
8
18
Parameters
Test Conditions
Min
-
Typ
6
Max
18
Units
µs
Notes
CT Micro
Proprietary & Confidential
Page 3
Rev 5
Dec, 2016
CT357 Series
DC Input 4-Pin Mini-Flat Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev 5
Dec, 2016
CT357 Series
DC Input 4-Pin Mini-Flat Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 5
Dec, 2016
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