CTT0223, CTT1223, CTT2223, CTT3223
600V Random Phase High Power Photo TRIAC
Features
High isolation 5000 VRMS
Supports 0.3 A, 0.6 A, 0.9 A and 1.2 A
RoHS compliant
REACH compliance
External creepage > 7.5mm
Internal creepage > 6.0mm
Insulation distance > 0.4mm
Regulatory Approvals
UL - UL1577 (pending approval)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The random phase power Triac consists of a Triac
and a photo-Triac, which is optically coupled to a
gallium arsenide Infrared emitting diode, and house
in a 7-lead DIP package. It also comes with different
lead forming options.
Applications
Home appliances
Industrial equipment
Package Outline
Schematic
Note: Different bending options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Rev 2
Nov, 2017
CTT0223, CTT1223, CTT2223, CTT3223
600V Random Phase High Power Photo TRIAC
Absolute Maximum Rating at 25
o
C
Symbol
V
iso
T
OPR
T
STG
T
SOL
Wave soldering temperature
260
o
C
Parameters
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Ratings
5000
-40 ~+85
-40 ~+125
260
Units
Vrms
o
C
o
C
o
C
Notes
Emitter
I
F
V
R
I
FP
P
in
LED forward current
LED reverse voltage
Peak forward current
Power dissipation
50
6
1
75
mA
V
A
mW
Detector
V
DRM
Repetitive peak OFF-state voltage
CTT0223
CTT1223
I
T(RMS)
Continuous Current Load
CTT2223
CTT3223
CTT0223
CTT1223
I
TSM
Peak Current Load
CTT2223
CTT3223
P
out
P
T
Power dissipation
Total power dissipation
9
12
800
850
mW
mW
0.9
1.2
3
6
A
600
0.3
0.6
A
V
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Nov, 2017
CTT0223, CTT1223, CTT2223, CTT3223
600V Random Phase High Power Photo TRIAC
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25°C (unless otherwise specified)
Test Conditions
I
F
=10mA
V
R
= 6V
f= 1MHz
Min
-
-
-
Typ
-
-
45
Max
1.3
5
-
Units
V
µA
pF
Notes
Detector Characteristics
Symbol
I
DRM
V
INH
V
TM
dv/dt
Voltage
Parameters
Peak Blocking Current
Inhibit Voltage
Peak On-State Voltage
Critical Rate of Rise off-State
Test Conditions
I
F
= 0mA, V
DRM
= Rated V
DRM
I
F
= Rated I
FT
I
F
= Rated I
FT
, I
TM
= 100mA
V
PEAK
= Rated V
DRM
Min
-
-
-
200
Typ
-
-
-
-
Max
100
50
2.5
-
Units
uA
V
V
V/µs
Notes
Transfer Characteristics
Symbol
I
FT
I
H
R
IO
C
IO
Parameters
Input Trigger Current
Holding Current
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
Test Conditions
Terminal Voltage = 3V
Min
-
-
1x10
11
-
Typ
-
-
-
0.25
Max
10
25
-
-
Units
mA
mA
Ω
pF
Notes
CT Micro
Proprietary & Confidential
Page 3
Rev 2
Nov, 2017
CTT0223, CTT1223, CTT2223, CTT3223
600V Random Phase High Power Photo TRIAC
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Rev 2
Nov, 2017
CTT0223, CTT1223, CTT2223, CTT3223
600V Random Phase High Power Photo TRIAC
CT Micro
Proprietary & Confidential
Page 5
Rev 2
Nov, 2017
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