CT816 Series
DC Input 4-Pin Phototransistor Optocoupler
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
External Creepage ≥ 7.4mm
Distance Through Isolation ≥ 0.4mm
Spatial Distance ≥ 7.5mm (S/SL Type)
Spatial Distance ≥ 8.0mm (M/SLM Type)
Operating Temperature range - 55 °C to 110 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT816 series consists of a photo transistor
optically coupled to a gallium arsenide Infrared-
emitting diode in a 4-lead DIP package with bending
options.
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
CT Micro
Proprietary & Confidential
Page 1
Rev 5
Nov, 2017
CT816 Series
DC Input 4-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
P
TOT
T
OPR
T
STG
T
SOL
Parameters
Isolation voltage (AC, 1 minute)
Total power dissipation
Operating temperature
Storage temperature
Soldering temperature
Ratings
5000
200
-55 ~ +110
-55 ~ +150
260
Units
V
RMS
mW
o
C
o
C
o
C
Notes
Emitter
I
F
I
F(TRANS)
V
R
P
D
Forward current
Peak transient current
Reverse voltage
Emitter power dissipation
(≤1μs P.W,300pps)
60
1
6
100
mA
A
V
mW
Detector
P
D
B
VCEO
B
VECO
I
C
Detector power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
80
6
50
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Rev 5
Nov, 2017
CT816 Series
DC Input 4-Pin Phototransistor Optocoupler
Electrical Characteristics
T
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
A
= 25°C (unless otherwise specified)
Test Conditions
I
F
=10mA
V
R
= 6V
f= 1MHz
Min
-
-
-
Typ
1.24
-
30
Max
1.4
5
-
Units
V
µA
pF
Notes
Detector Characteristics
Symbol
B
VCEO
B
VECO
I
CEO
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CE
= 20V, I
F
=0mA
Min
80
6
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
Transfer Characteristics
Symbol
Parameters
CT816
CT816A
Current Transfer
CT816B
I
F
= 5mA, V
CE
= 5V
Ratio
CT816C
CT816D
CT816F
CT816I
CT816J
Current Transfer
CT816K
CT816I
CT816J
CT816K
Collector-Emitter Saturation
I
F
= 1mA, V
CE
= 5V
I
F
= 10mA, V
CE
= 5V
200
300
100
63
100
160
22
34
56
I
F
= 20mA, I
C
= 1mA
Voltage
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
-
5x10
10
-
-
-
-
-
-
-
-
-
-
0.1
-
0.25
400
600
200
125
200
320
%
Ratio
-
-
-
0.2
-
1
V
Ω
pF
Test Conditions
Min
50
80
130
Typ
-
-
-
Max
600
160
260
Units
Notes
CTR
%
CTR
V
CE(SAT)
R
IO
C
IO
CT Micro
Proprietary & Confidential
Page 3
Rev 5
Nov, 2017
CT816 Series
DC Input 4-Pin Phototransistor Optocoupler
Switching Characteristics
Symbol
t
r
t
f
Rise Time
I
C
= 2mA, V
CE
= 2V, R
L
= 100Ω
Fall Time
-
8
-
Parameters
Test Conditions
Min
-
Typ
6
Max
-
Units
µs
Notes
Test Circuit
I
C
I
F
Input
R
L
Output
Input
Pulse
Output
Pulse
R
IN
t
on
t
r
t
f
t
off
CT Micro
Proprietary & Confidential
Page 4
Rev 5
Nov, 2017
CT816 Series
DC Input 4-Pin Phototransistor Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 5
Rev 5
Nov, 2017
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