CT452
DC Input 4-Pin Mini-Flat
High BV
CEO
Photo Darlington Optocoupler
Features
High isolation 3750 VRMS
CTR : Min 1000%
High B
VCEO
= 350V
Operating temperature range - 55 °C to 100 °C
Green Package
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT452 consists of a high power photodarlington
transistor optically coupled to a gallium arsenide
Infrared-emitting diode in a 4-lead Mini-Flat
package.
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Package Outline
Schematic
Note: Different lead forming options available. See package
dimension.
CT Micro
Proprietary & Confidential
Page 1
Preliminary 0.1
Aug, 2017
CT452
DC Input 4-Pin Mini-Flat
High BV
CEO
Photo Darlington Optocoupler
Absolute Maximum Rating at 25
o
C
Symbol
V
ISO
T
OPR
T
STG
T
SOL
P
TOT
Isolation voltage
Operating temperature
Storage temperature
Soldering temperature
Total power dissipation
Parameters
Ratings
3750
-55 ~ +100
-55 ~ +125
260
170
Units
V
RMS
0
C
0
C
0
C
Notes
mW
Emitter
I
F
I
F(TRANS)
V
R
P
C
Forward current
Peak transient current
Reverse voltage
Power dissipation
(≤1μs P.W,300pps)
60
1
6
150
mA
A
V
mW
Detector
P
D
B
VCEO
B
VECO
I
C
Power dissipation
Collector-Emitter Breakdown Voltage
Emitter-Collector Breakdown Voltage
Collector Current
150
350
0.1
150
mW
V
V
mA
CT Micro
Proprietary & Confidential
Page 2
Preliminary 0.1
Aug, 2017
CT452
DC Input 4-Pin Mini-Flat
High BV
CEO
Photo Darlington Optocoupler
Electrical Characteristics
T
A
= 25°C (unless otherwise specified)
Emitter Characteristics
Symbol
V
F
I
R
C
IN
Parameters
Forward voltage
Reverse Current
Input Capacitance
Test Conditions
I
F
=10mA
V
R
= 5V
f= 1MHz
Min
Typ
1.24
Max
1.4
5
-
Units
V
µA
pF
Notes
-
-
-
15
Detector Characteristics
Symbol
Parameters
Collector-Emitter Breakdown
Emitter-Collector Breakdown
Collector-Emitter Dark Current
Test Conditions
I
C
= 100µA
I
E
= 100µA
V
CE
= 200V, I
F
=0mA
Min
350
0.1
-
Typ
-
-
-
Max
-
-
100
Units
V
V
nA
Notes
B
VCEO
B
VECO
I
CEO
Transfer Characteristics
Symbol
Parameters
Current Transfer Ratio
Collector-Emitter Saturation
Test Conditions
I
F
= 1mA, V
CE
= 2V
I
F
= 20mA, I
C
= 100mA
Voltage
Isolation Resistance
Isolation Capacitance
V
IO
= 500V
DC
f= 1MHz
Min
1000
-
5x10
10
0.6
-
Typ
Max
15000
1.2
Units
%
V
Ω
pF
Notes
CTR
V
CE(SAT)
R
IO
C
IO
Switching Characteristics
Symbol
t
r
t
f
Rise Time
I
C
=2mA, V
CE
= 2V, R
L
= 100Ω
Fall Time
-
-
95
Parameters
Test Conditions
Min
-
Typ
-
Max
250
Units
µs
Notes
CT Micro
Proprietary & Confidential
Page 3
Preliminary 0.1
Aug, 2017
CT452
DC Input 4-Pin Mini-Flat
High BV
CEO
Photo Darlington Optocoupler
Typical Characteristic Curves
CT Micro
Proprietary & Confidential
Page 4
Preliminary 0.1
Aug, 2017
CT452
DC Input 4-Pin Mini-Flat
High BV
CEO
Photo Darlington Optocoupler
CT Micro
Proprietary & Confidential
Page 5
Preliminary 0.1
Aug, 2017
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