d. Maximum under steady state conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is
80
A.
1
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SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 20 A, di/dt = 100 A/µs, T
J
= 25 °C
I
S
= 22 A
0.8
52
70.2
27
25
T
C
= 25 °C
70
100
1.2
78
105
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 0.625
I
D
24 A, V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 0.555
I
D
27 A, V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 32 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 29 A
V
DS
= 12.5 V, V
GS
= 0 V, f = 1 MHz
1195
975
670
67
57.3
31
25
1.4
18
11
70
10
55
180
55
12
2.1
27
17
105
15
83
270
83
18
ns
nC
pF
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
=
40
V, V
GS
= 0 V
V
DS
=
40
V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 32 A
V
GS
= 4.5 V, I
D
= 29 A
V
DS
= 15 V, I
D
= 32 A
70
0.005
0.006
110
1.2
40
35
-
5.5
2.5
± 100
1
10
V
mV/°C
V
nA
µA
A
S
Symbol
Test Conditions
Min .
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
2
VBQA1405
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
3.0
V
GS
= 10 thru 4 V
75
I
D
- Drain Current (A)
I
D
- Drain Current (A)
2.4
60
1.8
45
1.2
T
C
= 125 °C
0.6
30
15
V
GS
= 2 V
0
0.0
0.5
1.0
1.5
V
GS
= 3 V
T
C
= 25 °C
0.0
- 55 °C
2.0
2.5
0
V
DS
- Drain-to-Source Voltage (V)
1
2
3
V
GS
- Gate-to-Source Voltage (V)
4
Output Characteristics
600
T
C
= 25 °C
500
G
fs
- Transconductance (S)
T
C
= 125 °C
R
DS(on)
- Drain-to-Source On-Resistance (Ω)
0.012
Transfer Characteristics
0.009
400
V
GS
= 4.5 V
300
T
C
= - 55 °C
200
0.006
V
GS
= 10 V
0.003
100
0
0
10
20
30
40
50
60
70
80
90
I
D
- Drain Current (A)
0
0
15
30
45
60
75
90
I
D
- Drain Current (A)
Transconductance
3000
R
DS(on)
vs. Drain Current
10
I
D
= 32 A
1200
V
G S
- Gate-to-Source Voltage (V)
8
V
DS
= 15 V
6
C - Capacitance (pF)
C
iss
1000
C
oss
800
4
V
DS
= 24 V
600
2
C
rss
0
0
6
12
18
24
30
V
DS
- Drain-to-Source Voltage (V)
0
0
30
60
90
120
150
180
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3
VBQA1405
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.6
R
DS(on)
- On-Resistance (Normalized)
V
GS
= 10 V, I
D
= 32 A
V
GS
= 4.5 V, I
D
= 29.8 A
1.4
I
S
- Source Current (A)
10
100
1.2
1
T
J
= 150 °C
1.0
0.1
T
J
= 25 °C
0.8
0.01
0.6
- 50
0.001
- 25
0
25
50
75
100
125
150
175
0
T
J
- Junction Temperature (°C)
0.2
0.4
0.6
0.8
V
SD
- Source-to-Drain Voltage (V)
1
On-Resistance vs. Junction Temperature
0.004
I
D
= 32 A
R
DS(on)
- On-Resistance (Ω)
T
A
= 125 °C
0.003
2.4
2.8
Forward Diode Voltage vs. Temperature
I
D
= 250 µA
0.002
T
A
= 25 °C
0.001
1.2
V
GS(th)
(V)
10
2.0
1.6
0.000
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
0.8
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
R
DS(on)
vs. V
GS
vs. Temperature
1000
100
Limited by r
DS(on)
*
100 µs
I
D
- Drain Current (A)
Threshold Voltage
1 ms
10
10 ms
100 ms
1
1s
10 s
DC
0.1
0.01
T
A
= 25 °C
Single Pulse
BVDSS Limited
0.001
0.1
*V
GS
1
10
100
V
DS
- Drain-to-Source Voltage (V)
minimum V
GS
at which r
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
4
VBQA1405
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TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
300
300
250
Power Dissipation (W)
I
D
- Drain Current (A)
250
200
200
150
100
Package Limited
150
100
50
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Current Derating*
Power Derating
* The power dissipation P
D
is based on T
J(max)
= 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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