UMW
R
UMW SI2310A
10
10
T
A
=25
o
C
8
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
I
D
, Drain Current (A)
V
G
= 3.0 V
T
A
= 150 C
8
o
10V
7.0V
5.0V
4.5V
V
G
= 3.0 V
6
6
4
4
2
2
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
2.0
I
D
=2A
99
1.8
T
A
=25 C
1.6
o
I
D
=3A
V
G
=10V
R
DS(ON)
(m
Ω
)
93
Normalized R
DS(ON)
1.4
1.2
87
1.0
81
0.8
75
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
3
1.2
2
Normalized V
GS(th)
(V)
1.0
I
S
(A)
T
j
=150
o
C
1
T
j
=25
o
C
0.8
0.6
0
0
0.2
0.4
0.6
0.8
1
1.2
0.4
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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3
友台半导½有限公司
UMW
R
UMW SI2310A
f=1.0MHz
14
1000
V
GS
, Gate to Source Voltage (V)
12
I
D
=3A
V
DS
= 30 V
V
DS
=38V
V
DS
=48V
C
iss
10
8
C (pF)
100
6
4
C
oss
C
rss
2
0
0
3
6
9
12
15
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.000
1
Duty factor=0.5
10.000
Normalized Thermal Response (R
thja
)
0.2
100us
1.000
0.1
0.1
0.05
I
D
(A)
1ms
10ms
100ms
1s
DC
0.01
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 270℃/W
℃
0.100
0.01
Single Pulse
0.010
T
A
=25 C
Single Pulse
o
0.001
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
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4
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