TSF16N50MR
TSF16N50MR
General Description
500V N-Channel MOSFET
Features
• 16.0A,500V,Max.R
DS(on)
=0.4 Ω @ V
GS
=10V
• Low gate charge(typical 32nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Absolute Maximum Ratings
Symbol
V
DSS
V
GS
I
D
I
DM
E
AS
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Pulsed Drain Current
T
C
=25℃ unless otherwise specified
Value
Parameter
Units
V
V
A
A
A
mJ
mJ
V/ns
W
W/℃
℃
℃
500
±
30
T
C
= 25℃
T
C
= 100℃
(Note 1)
(Note 2)
(Note 1)
(Note 3)
16*
9.6*
64*
780
20
4.5
38.5
0.3
-55 to +150
300
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25℃)
-Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Resistance Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink Typ.
Thermal Resistance,Junction-to-Ambient
Value
Units
℃/W
℃/W
℃/W
3.3
--
62.5
© 2018 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
TSF16N50MR
Electrical Characteristics
T
C
=25
℃
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
FS
BV
DSS
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 uA㎂
2.0
--
--
500
--
--
--
--
--
--
4.0
V
Ω
S
V
V/℃
uA
uA
nA㎁
nA㎁
Static Drain-Source On-Resistanc
V
GS
= 10 V, I
D
= 8.0A
e
Forward Transconductance
Drain-Source Breakdown Voltage
0.32
23
--
0.5
--
--
--
--
0.4
--
--
--
1
10
100
-100
V
DS
=
20V,
I
D
= 8.0A㎂
V
GS
= 0 V, I
D
= 250 uA㎂
ID = 250 uA, Referenced to 25
℃
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, T
C
= 125℃
V
GS
= 30 V, V
DS
= 0 V
V
GS
=- 30 V, V
DS
= 0 V
Off Characteristics
△BVDSS
Breakdown Voltage Temperature
/
△TJ
Coefficient
I
DSS
I
GSSF
I
GSSR
Zero Gate Voltage Drain Current
Gate-Body Leakage Current,Forward
Gate-Body Leakage Current,Reverse
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
3000
200
30
--
--
--
pF㎊
pF㎊
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 400 V, I
D
= 16.0A,
V
GS
= 10 V
(Note 4)
V
DS
= 250 V, I
D
= 16.0A,
R
G
= 25 Ω
(Note 4)
--
--
--
--
--
--
--
42
142
76
68
38
10
17
--
--
--
--
--
--
--
ns
ns㎱
ns㎱
ns㎱
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
NOTES:
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 16.0A, V
GS
= 0 V
I
S
=16.0A, V
GS
= 0 V
di
F
/dt = 100 A/μs
--
--
--
--
--
--
--
--
490
5.0
16.0
64.0
1.4
--
--
A
V
ns㎱
uC
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=5.5mH, I
AS
=16.0A, V
DD
=50V, R
G
=25
Ω,
Starting TJ=25
℃
3. I
SD
≤16.0A, di/dt ≤ 200A/us, V
DD
≤ BV
DSS
, Starting TJ = 25
℃
4. Essentially Independent of Operating Temperature Typical Characteristics
© 2018 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
Typical Characteristics
TSF16N50MR
© 2018 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
TSF16N50MR
Typical Characteristics
© 2018 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
TSF16N50MR
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
V
GS
DUT
3mA
Q
gs
Q
gd
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
V
DS
I
D
R
G
10V
L
V
DD
BV
DSS
I
AS
1
E
AS
= ---- L
L
I
AS2
2
I
D
(t)
DUT
V
DD
t
p
V
DS
(t)
Time
© 2018 Truesemi Semiconductor Corporation
Ver.B2
www.truesemi.com
stm32/stm8
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