SL11N65C
N-Channel
Super Junction Power MOSFET
V
DS
R
DS(ON)TYP
I
D
650
300
11.5
V
mΩ
A
Features
●
New technology for high voltage device
●
Low on-resistance and low conduction losses
●
small package
●
Ultra Low Gate Charge cause lower driving requirements
●
100% Avalanche Tested
●
ROHS compliant
Application
●
Power factor correction（PFC）
●
Switched mode power supplies(SMPS)
●
Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
SL11N65CK
SL11N65C
SL11N65CF
Device Package
TO-263
TO-220
TO-220F
Marking
SL11N65CK
SL11N65C
SL11N65CF
TO-263
Table 1.
Absolute Maximum Ratings (T
C
=25℃)
Parameter
Drain-Source Voltage (
V
GS=
0V）
Gate-Source Voltage (
V
DS
=0V), AC(f>1HZ)
Continuous Drain Current
Continuous Drain Current
Pulsed drain current
at T
C
=25°C
at T
C
=100°C
TO-220
TO-220F
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
P
D
E
AS
I
AR
E
AR
SL11N65CK
SL11N65C
650
SL11N65CF
Unit
V
V
±30
11.5
7
46
101
0.81
144
6
0.5
11.5*
7*
46*
32.6
0.26
A
A
A
W
W/
°C
(Note 1)
Maximum Power Dissipation(T
C
=25
℃)
Derate above 25°C
(Note2)
Single pulse avalanche energy
Avalanche current
(Note 1)
(Note 1)
mJ
A
Repetitive Avalanche energy
，t
AR
limited by T
jmax
mJ
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1
SL11N65C
Parameter
Drain Source voltage slope, V
DS
≤480
V,
Symbol
dv/dt
dv/dt
SL11N65CK
SL11N65C
50
15
SL11N65CF
Unit
V/ns
V/ns
°C
Reverse diode dv/dt，
V
DS
≤480
V,I
SD
<I
D
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
T
J
,T
STG
-55...+150
Table 2.
Thermal Characteristic
Parameter
Symbol
R
thJC
R
thJA
SL11N65CK
SL11N65C
1.24
62
SL11N65CF
3.83
80
Unit
°C /W
°C /W
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient
（Maximum）
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
BV
DSS
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
GS
=0V I
D
=250μA
V
DS
=650V,V
GS
=0V
V
DS
=650V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=7A
Min
650
Typ
Max
Unit
V
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
rrm
T
C
=25°C
Tj=25°C,I
SD
=11.5A,V
GS
=0V
Tj=25°C,I
F
=5.8A,
di/dt=100A/μs
0.9
220
2.2
19
11.5
46
1.2
A
A
V
nS
uC
A
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,I
D
=5.5A,
R
G
=3Ω,V
GS
=10V
11
8
58
9
70
14
nS
nS
nS
nS
C
lss
C
oss
C
rss
Q
g
Q
gs
Q
gd
V
DS
=50V,V
GS
=0V,
F=1.0MHz
870
54
1.8
19
6
6.5
pF
pF
pF
nC
nC
nC
0.05
1
100
±100
μA
μA
nA
V
mΩ
3
3.5
300
4
360
V
DS
=480V,I
D
=11.5A,
V
GS
=10V
Notes:
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.
Tj=25℃,VDD=50V,VG=10V, R
G
=25Ω
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2
SL11N65C
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for
TO-220F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
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3
SL11N65C
Figure7. R
DS(ON)
vs Junction Temperature
Figure8. BV
DSS
vs Junction Temperature
Figure9. Maximum I
D
vs Junction Temperature
Figure10. Gate charge waveforms
Figure11. Capacitance
Figure12. Transient Thermal Impedance
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4
SL11N65C
Figure13. Transient Thermal Impedance for
TO-220F
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5
stm32/stm8
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