Mar 2015
SS32 thru SS310
SMD Schottky Barrier Diodes
Revision: A
General Description
This Schottky diode is for use in low voltage,
high frequency rectifier of switching mode power
supplier, DC/DC converters and polarity protection
application.
Low power loss, high efficiency
Low Forward Voltage Drop
High forward surge capacity
Features
Case: SMA, molded epoxy body
Terminal: Matte tin plated leads
Polarity: See mark on body
Maximum Ratings
(T
A
=25℃ unless otherwise noted)
Parameter
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking
voltage
Maximum average forward
rectifier current
Peak forward surge current
8.3ms single half sine-wave
superimposed on rated load
Operating Junction
Temperature Range
T
J
, T
STG
-50 to 150
℃
I
FSM
80
A
Symbol
V
RRM
V
RMS
V
DC
SS32
20
14
20
SS33
30
21
30
SS34
40
28
40
SS35
50
35
50
SS36
60
42
60
SS38
80
56
80
SS39
90
63
90
SS310
100
70
100
Units
V
V
V
I
F(AV)
3.0
A
Electrical Characteristics
Parameter
Maximum
instantaneous
forward voltage
Maximum DC
reverse current at
blocking voltage
T
C
=125℃
T
C
=25℃
IF=3A
Condition
(T
A
=25℃ unless otherwise noted)
Symbol
SS32
SS33
SS34
SS35
SS36
SS38
SS39
SS310
Units
V
F
0.55
0.75
0.85
V
0.5
I
R
10
mA
Thermal Characteristic
Parameter
Typical Thermal resistance
(T
A
=25℃ unless otherwise noted)
Symbol
R
θJA
(1)
SS32 thru SS310
88
Units
℃/W
1.
P.C.C. Mounted with 0.2”× 0.2”(5.0×5.0mm) copper pads
ShangHai Sino-IC Microelectronic Co., Ltd.
1.
SS32 thru SS310
Ratings and Characteristics Curves
(T
A
=25℃ unless otherwise noted)
PEAK FORWARD SURGE CURRENT,
F1G.1-FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
60Hz RESISTIVE OR
INDUCTIVE LOAD
F1G.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
T
L
=100℃
8.3ms Single Half Sine-Wave
(JEDEC Method)
3.0
80
AMPERES
2.0
60
40
1.0
P.C.B.MOUNTED
0.27X0.27″(7.0X7.0mm)
COPPER PAD AREAS
0
50
60
70
80
90
100 110 120 130 140 150 160
20
0
1
10
100
LEAD TEMPERATURE,(
℃
)
F1G.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
T
J
=25℃
Pulse Width=300us
1% Duty Cycle
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
F1G.4-TYPICAL REVERSE CHARACTERISTICS
100
1.0
10
0.1
1.0
T
J
=125℃
T
J
=10℃
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
F1G.5-TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE,(pF)
100
T
J
=25℃
f=1MHz
Vsig=50mVp-p
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
10
1.0
10
100
REVRESE VOLTAGE, VOLTS
ShangHai Sino-IC Microelectronic Co., Ltd.
2.
SS32 thru SS310
Package Outline Dimensions in inches and millimeters
SMA(DO-214AC)
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.net
Website:
http://www.sino-ic.net
33932403
33932405
33933508
33933608
ShangHai Sino-IC Microelectronic Co., Ltd.
3.
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