SHANGHAI
MICROELECTRONICS CO., LTD.
MARCH 2008
SMBJ Seires
600 W Surface Mount Transient Voltage Suppressors
FGeneral Description
SMBJ Seires from SINO-IC is designed
to protect voltage sensitive components from
high voltage, high energy transients. It has
excellent clamping capability, high surge
capability,
fast
response
time
and
cost-effectiveness.
Revision:B
Features
Peak pulse power: 600 W (10/1000μs)
Breakdown Voltage :5.0V~120V
Bidirectional Type
Low Clamping Factor
Fast Response Time < 1 ns
Glass Passivated Junction
Applications
Communication Systems
Power Supplies
Medical Equipment
Business Machines
Mechanical Data
Case: JESEC DO214AA. Molded plastic over glass
passivated junction
Polarity: Color band denoted positive end
except Bidirectional
(cathode)
Absolute Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Symbol
Value
Uni
ts
Peak Power Dissipation (Note 1.) @T
L
= 25°C, Pulse Width = 1 ms
P
PK
I
PPM
600
SEE TABLE 1
100
-55 to 150
-55 to 150
W
A
A
°C
°C
Peak pulse current of on 10/1000μs waveform
Peak forward surge Current
Storage Temperature Range
Operating Junction and Storage Temperature Range
Notes:
1. 10 X 1000 us, non–repetitive
I
PSM
T
STG
T
J
, T
STG
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
3. Mounted on 5.0mm2(0.03mm thick) Copper Rads to each terminal
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
),
which should be equal to or greater than the DC or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C.
6. Surge current waveform per Figure 1 and derate per Figure 3.
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Test Current
Breakdown Voltage @ I
T
ShangHai Sino-IC Microelectronics Co., Ltd.
1.
Rating And Characteristic Curves@ 25°C Unless Otherwise Specified
Fig1. Peak Pulse Power Rating
Fig2. Pulse Derating Curve
Fig3. Pulse Waveform
Fig4. Typical Junction
Fig5.- Typ. Transient Thermal Impedance
Fig6.- Maxmum Non-Repetitive Peak
Forward Surge Current
ShangHai Sino-IC Microelectronics Co., Ltd.
3.
PACKAGE DIMENSIONS (DO-214AA)
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
4.
详细参数
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