SHANGHAI
MICROELECTRONICS CO., LTD.
June 2006
SESDFBPxxV Series
Single Line ESD Protection Diode
Revision:B
General Description
The SESDFBPxxV ESD protection diode is designed
to
replace
multilayer
varistors
(MLVs)
in
portable
applications such as cell phones, notebook computers, and
PDA’s. They feature large cross-sectional area junctions for
conducting high transient currents, offer desirable electrical
characteristics for board level protection, such as fast
response time, lower operating voltage, lower clamping
voltage and no device degradation when compared to
MLVs.
Features
60W peak pulse power
Small package for use in portable electionics
Low leakage current
These are Pb−Free Devices
Applications
Cellular phones handsets and Accessories
PDA’s
MP3 players
Digital cameras
Portable applications
mobile telephone
Complies with the following standards
IEC61000-4-2
Level 4
15 kV (air discharge)
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
Functional diagram
WBFBP-02C
Maximum Ratings
Symbol
V
PP
P
PK
I
PP
T
J
,T
STG
T
L
Peak Pulse Power
Peak Pulse Power
Junction and Storage Temperature Range
Lead Solder Temperature – Maximum (10 Second Duration)
Parameter
IEC 61000-4-2 (ESD) Contact
Value
±15
60
12
-55 to 150
260
Unit
kV
W
A
℃
℃
ShangHai Sino-IC Microelectronics Co., Ltd.
1
SESDFBPxxV
Electrical Parameter
Symbol
I
PP
V
C
V
RWM
I
R
I
T
V
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @
V
RWM
Test Current
Breakdown Voltage @ I
T
Forward Current
Forward Voltage @ I
F
Electrical Characteristics (T
A
=25℃ unless otherwise noted, V
F
=1.25V Max. @ I
F
=10mA
for all types)
Part
Numbers
Min.
V
SESDFBP3V3
SESDFBP05V
SESDFBP07V
SESDFBP12V
5.0
6.0
7.5
13.5
Typ.
V
5.7
6.8
8.1
14.2
Max.
V
6.4
7.2
8.6
15.0
V
BR
I
T
V
RWM
I
R
C
Max.
1MHZ,0V Bias
(note 1)
mA
1
1
1
1
V
3.3
5.0
7.0
12.0
µA
1
1
1
1
pF
35
30
25
15
1.
Capacitance of one diode at f=1MHz,V
RW
=0V,T
A
=25℃
Typical Characteristics
Figure 1. Non-Repetitive Peak Pulse Power
versus Pulse Time
Fig 2. Power Derating Curve
ShangHai Sino-IC Microelectronics Co., Ltd.
2
SESDFBPxxV
Figure 3. Clamping Voltage vs. Peak Pulse Current
Figure 4. Forward Voltage vs. Forward Current
Figure 5.Junction Capacitance vs. Reverse Voltage Fig 6. ESD Clamping (8kV Contact per IEC 61000-4-2)
WBFBP-02C Mechanical Data
ShangHai Sino-IC Microelectronics Co., Ltd.
3
SESDFBPxxV
Symbol
A
A1
D
E
D1
E1
b
e
L
L1
0.275
0.675
0.275
0.010REF.
Dimensions In Millimeters
Min.
0.450
0.010
0.950
0.550
0.450REF.
0.400REF.
0.325
0.725
0.325
0.011
0.027
0.011
0.000REF.
Max.
0.550
0.070
1.050
0.650
Dimensions In Inches
Min.
0.018
0.000
0.037
0.022
0.018REF.
0.016REF.
0.013
0.029
0.013
Max.
0.022
0.003
0.041
0.026
The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd.
© 2005 SINO-IC – Printed in China – All rights reserved.
SHANGHAI SINO-IC MICROELECTRONICS CO., LTD
Add:
Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong,
Shanghai 201203, China
Phone:
+86-21-33932402 33932403 33932405 33933508 33933608
Fax:
+86-21-33932401
Email:
webmaster@sino-ic.com
Website:
http://www.sino-ic.com
ShangHai Sino-IC Microelectronics Co., Ltd.
4
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