BAP50-03
General purpose PIN diode
FEATURES
•
Low diode capacitance
•
Low diode forward resistance.
APPLICATIONS
•
General RF applications.
DESCRIPTION
General purpose PIN diode in a SOD323 small plastic
SMD package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
I
F
P
tot
T
stg
T
j
PARAMETER
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
CONDITIONS
−
−
−
−65
−65
MIN.
MAX.
50
50
500
+150
+150
UNIT
V
mA
mW
°C
°C
1 cathode
Marking code:
A8
handbook, halfpage
1
2
2 anode
Fig.1 Simplified outline (SOD323) and symbol.
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
R
I
R
C
d
PARAMETER
forward voltage
reverse voltage
reverse current
diode capacitance
CONDITIONS
I
F
= 50 mA
I
R
= 10
µA
V
R
= 50 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 5 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
MIN.
−
50
−
−
−
−
−
−
−
TYP.
0.95
−
−
0.4
0.3
0.2
25
14
3
MAX.
1.1
−
100
−
0.55
0.35
40
25
5
UNIT
V
V
nA
pF
pF
pF
Ω
Ω
Ω
REV.08
1 of 3
BAP50-03
GRAPHICAL DATA
10
3
handbook, halfpage
D
(Ω)
10
2
300
r
handbook, halfpage
500
Cd
(fF)
400
200
10
100
1
10
−2
10
−1
1
I F (mA)
10
0
0
4
8
12
16
VR (V)
f = 1 MHz; T
j
= 25
°C.
20
f = 100 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of
forward current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
2
0
|
S21
|
(1)
(2)
handbook, halfpage
2
0
|
S21
|
(dB)
−1
(dB)
−5
(3)
−2
−10
−3
−15
−4
−20
−5
0.5
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(1) I
F
= 10 mA.
(2) I
F
= 1 mA.
(3) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
T
amb
= 25
°C.
Fig.4
Insertion loss (|S
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|S
21
|
2
) of the diode as a function
of frequency; typical values.
REV.08
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BAP50-03
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD323
---
A
A1
c
Lp
HE
v
M
A
v
---
D
A
1
E
bp
2
(1)
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.0
---
A1
0.10
−
0.00
bp
0.35
0.25
c
0.15
0.08
D
1.8
1.6
E
1.40
1.20
HE
2.7
2.5
Lp
0.40
0.25
v
0.90
0.80
Note
1. The marking bar indicates the cathode.
REV.08
3 of 3
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