PTD3006
30V/80A N-Channel Advanced Power MOSFET
Features
Low On-Resistance
Fast Switching
100% Avalanche Tested
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Description
PTD3006 designed by the trench process
techniques to achieve extremely low on-resistance.
Additional features of this design can operate at
high junction temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Motor
applications and a wide variety of other
applications.
D
S
G
TO-252
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (Ta) is 25°C, unless otherwise specified.
Symbol
Parameter
Rating
Unit
Common Ratings (T
C
=25°C Unless Otherwise Noted)
V
GS
Gate-Source Voltage
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
±20
30
150
-55 to 150
V
V
°C
°C
A
V
(BR)DSS
T
J
T
STG
I
S
T
C
=25°C
80
Mounted on Large Heat Sink
I
DM
Pulse Drain Current Tested (Sillicon Limit)
Continuous Drain current@V
GS
=10V (See Fig2)
Maximum Power Dissipation
Thermal Resistance-Junction to Case
T
C
=25°C
T
C
=25°C
T
C
=25°C
320
80
58
1.98
A
A
W
°C/W
I
D
P
D
R
JC
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
②
225
mJ
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2015-3-26
PTD3006
30V/80A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min.
Typ.
Max.
Unit
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
V
(BR)DSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
V
GS
=0V I
D
=250μA
V
DS
=24V,V
GS
=0V
V
DS
=24V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=40A
V
GS
=4.5V, I
D
=20A
30
--
--
--
1.0
--
--
--
--
--
--
1.6
4.5
5.5
--
1
100
±100
2.5
6.0
7.5
V
μA
μA
nA
V
mΩ
mΩ
I
DSS
Zero Gate Voltage Drain Current(Tc=125℃)
I
GSS
V
GS(TH)
R
DS(ON)
R
DS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
①
Drain-Source On-State Resistance
①
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise stated)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=10V
Total Gate Charge
V
GS
=4.5V
Gate-Source Charge
Gate-Drain Charge
V
DS
=15V,I
D
=18A,
V
GS
=10V
V
DS
=15V,V
GS
=0V,
f=1MHz
--
--
--
--
1350
190
115
38
15
--
--
--
--
pF
pF
pF
nC
nC
--
--
8
7
--
--
nC
nC
Switching Characteristics
t
d(on)
Turn-on Delay Time
V
DD
=15V,
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
I
D
=10A,
R
G
=4.7Ω,
V
GS
=10V
--
--
--
--
13
12
19
12
--
--
--
--
nS
nS
nS
nS
t
r
t
d(off)
t
f
Source- Drain Diode Characteristics@ T
J
= 25°C (unless otherwise stated)
I
SD
V
SD
t
rr
Q
rr
Note:
Source-drain current(Body Diode)
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
T
c
=25℃
I
S
=40A,V
GS
=0V
T
j
=25℃,I
sd
=40A,
V
GS
=0V
di/dt=100A/μs
--
--
--
--
--
22
11
80
1.2
--
--
A
V
nS
nC
①
Pulse width ≤ 300μs; duty cycle≤ 2%.
②
Limited by Tjmax, starting TJ = 25°C, L = 0.5mH,R
G
= 25Ω, I
AS
= 30A, V
GS
=10V. Part not recommended for use above this value
③
Repetitive rating; pulse width limited by max. junction temperature.
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2015-3-26
PTD3006
30V/80A N-Channel Advanced Power MOSFET
Typical Characteristics
I
D
, Drain-Source Current (A)
V
DS
, Drain -Source Voltage (V)
Fig1.
Typical Output Characteristics
I
D
, Drain-Source Current (A)
Tc - Case Temperature (°C)
Fig2.
Maximum Drain Current Vs.Case Temperature
I
D
, Drain-Source Current (A)
V
GS
, Gate -Source Voltage (V)
Fig3.
Typical Transfer Characteristics
Normalized On Resistance
Tj - Junction Temperature (°C)
Fig4.
Normalized On-Resistance Vs. Temperature
V
GS
, Gate -Source Voltage (V)
Fig5. On Resistance
Vs.
Gate -Source Voltage
- 3-
I
D
- Drain Current (A)
On Resistance (
mΩ
)
V
DS
, Drain -Source Voltage (V)
Fig6.
Maximum Safe Operating Area
2015-3-26
PTD3006
30V/80A N-Channel Advanced Power MOSFET
Typical Characteristics
I
SD
, Reverse Drain Current (A)
V
SD
, Source-Drain Voltage (V)
Fig7.
Typical Source-Drain Diode Forward Voltage
V
GS
, Gate-Source Voltage (V)
Qg -Total Gate Charge (nC)
Fig8.
Typical Gate Charge Vs.Gate-Source Voltage
V
GS(TH)
, Gate -Source Voltage (V)
Tj - Junction Temperature (°C)
Fig9.
Threshold Voltage Vs. Temperature
C, Capacitance (pF)
V
DS
, Drain-Source Voltage (V)
Fig10.
Typical Capacitance Vs.Drain-Source Voltage
Fig11.
Unclamped Inductive Test Circuit and
waveforms
Fig12.
Switching Time Test Circuit and waveforms
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2015-3-26
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