MUR8120&MUR8120F
MUR8120&MUR8120F
8.0AMPS. HIGH EFFICIENT RECTIFIERS
FEATURE
.Low
forward voltage drop
.High
current capability
.High
reliability
.High
surge current capability
.Epitaxial
construction
.High
temperature soldering guaranteed
260°C /10seconds, 0.25"(6.35mm)from case.
TO-220AC
MUR8120
ITO-220AC
MUR8120F
MECHANICAL DATA
.Case:
Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Mounting
position: any
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°C
superimposed on rated load (JEDEC method)
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operation Junction Temperature and Storage Temperature
Total device
Per Leg
Peak Forward Surge Current 8.3ms single half sine-wave
Symbol
MUR8120&MUR8120F
1200
840
1000
8.0
120.0
50
80
-55 to +150
Units
V
V
V
A
A
nS
pF
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
t
rr
C
J
T
J
,
T
STG
ELECTRICAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Forward Voltage (Per
Leg)
Maximum DC Reverse Current
at rated DC blocking voltage
at 8.0A DC
@T
A
=25°C
@T
A
=100°C
Symbol
Typ
2.20
----
----
Max
2.7
10.0
400.0
Units
V
μA
V
F
I
R
THERMAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 3)
Symbol
MUR8120
2.0
MUR8120F
3.0
Units
°C /W
R
(JC)
Notes:
1. Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance From Junction to Case
1
MUR8120&MUR8120F
RATING AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
8.0
FIG.2-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANEOUS FORWARD CURRENT,(A)
100
AVERGE FORWARD
RECTIFIED CURRENT,(A)
10
4.0
Single Phase Half
Wave 60Hz
Resistive or
inductive Load
0
0
50
100
150
200
1
T
J
=25
℃
Pulse Width=300
μ
s
1% Duty Cycle
.1
1.0
CASE TEMPERTURE,(
℃
)
FIG.3-MAXIMUN NON-REPETITIVE
FORWARD SURGE CURRENT
160
8.3ms Single Half
Sine-Wave (JEDEC
Method)
INSTANEOUS FORWARD
VOLTAGE,(V)
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
1.5
2.0
2.5
3.0
INSTANEOUS REVERSE CURRENT,(
μ
A)
10
PEAK FORWARD SURGE
CURRENT,(A)
120
1
80
0.1
T
J
=25
℃
40
0
0
10
.01
100
0
20
40
60
80
100
120
140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE
VOLTAGE,(%)
FIG.5-TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERSITIC
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
(+)
PULSE
GENERATOR
(NOTE 2)
(-)
+0.5A
trr
0
-0.25A
(+)
25Vdc
(approx)
(-)
1
Ω
(NOTE 1)
NON-
OSCILOSCOPE
INDUCTIVE
NOTES:1. Rise Time=7ns max, Input
Impedance= 1 megohm.22pF.
2. Rise Time=10ns max,
Souce Impedance= 50 ohms.
-1.0A
2
FPGA/CPLD
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