KIA
SEMICONDUCTORS
7A，650V
N-CHANNEL MOSFET
65R700
1.Description
This Power MOSFET is produced using KIA semi`s advanced super-junction technology. This
advanced technology has been especially tailored to minimize conduction loss, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices
are well suited for AC/DC power conversion in switching mode operation for higher efficiency.
2.
Features
R
DS(on)
=0.6Ω @ V
GS
=10V
Low gate charge ( typical 25nC)
High ruggedness
Fast switching
100% avalanche tested
Improved dv/dt capability
3.
Pin configuration
Pin
1
2
3
Function
Gate
Drain
Source
1 of 6
Rev 1.0 JUN 2015
KIA
SEMICONDUCTORS
7A，650V
N-CHANNEL MOSFET
65R700
(T
C
= 25 ºC , unless otherwise noted)
Rating
Units
V
650
V
+30
7*
A
5*
A
A
10*
mJ
43
mJ
86
A
1.7
V/ns
4.5
W
35
0.3
W/ºC
-55~+150
ºC
300
ºC
4.
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Drain current continuous
T
C
=25ºC
T
C
=100ºC
Symbol
V
DSS
V
GSS
I
D
Drain current pulsed (note1)
I
DM
Repetitive (note1)
E
AR
Avalanche energy
Single pulse (note2)
E
AS
Avalanche energy(note1)
I
AR
Peak diode recovery dv/dt (note3)
dv/dt
T
C
=25 ºC
Total power dissipation
P
D
derate above 25 ºC
Operating and storage temperature range
T
J,
T
STG
Maximum lead temperature for soldering
T
L
purposes, 1/8〞from case for 5 seconds
* Drain current limited by maximum junction temperature
5.
Thermal characteristics
Parameter
Thermal resistance, Junction-ambient
Thermal resistance, case-to-sink typ.
Thermal resistance, Junction-case
Symbol
R
thJA
R
thJS
R
thJC
Rating
62
-
3.6
Unit
ºC/W
ºC/W
ºC/W
2 of 6
Rev 1.0 JUN 2015
KIA
SEMICONDUCTORS
7A，650V
N-CHANNEL MOSFET
65R700
(T
C
=25°C,unless otherwise noted)
Conditions
Min
Typ
Max Unit
V
GS
=0V,I
D
=250μA
V
GS
=0V,I
D
=250μA
V
DS
=650V ,V
GS
=0V
V
DS
=480V ,T
C
=125ºC
V
GS
=30V,V
DS
=0V
V
GS
=-30V,V
DS
=0V
I
D
=250μA,referenced
to 25°C
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=3.5A
V
DS
=40V,I
D
=3.5A
(note4)
V
DS
=25V,V
GS
=0V,
f=1MHz
650
-
-
-
-
-
-
2.5
-
-
6.
Electrical characteristics
Parameter
Off characteristics
Drain-source
breakdown T
J
=25ºC
voltage
T
J
=125ºC
Zero gate voltage drain current
Gate-body leakage current
Forward
Reverse
Symbol
BV
DSS
I
DSS
I
GSS
-
700
-
-
-
-
0.6
3.5
0.6
16
-
-
1
10
100
-100
-
4.5
0.7
-
Breakdown voltage temperature coefficient
△BV
DSS
/△T
J
On characteristics
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
V
GS(th)
R
DS(on)
g
FS
V
V
μA
μA
nA
nA
V/°
C
V
Ω
S
Dynamic characteristics
Input capacitance
C
iss
Output capacitance
C
oss
Reverse transfer capacitance
C
rss
Switching characteristics
Turn-on delay time
t
d(on)
Rise time
t
r
Turn-off delay time
t
d(off)
Fall time
t
f
Total gate charge
Q
g
Gate-source charge
Q
gs
Gate-drain charge
Q
gd
Drain-source diode characteristics and maximum ratings
Drain-source diode forward voltage
V
SD
Continuous drain-source current
I
S
Pulsed drain-source current
I
SM
Reverse recovery time
t
rr
Reverse recovery charge
Q
rr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
360
25
1.2
25
55
70
40
8
2.0
2.7
-
-
-
190
2.3
-
-
-
-
-
-
-
-
-
-
1.5
7
18
-
-
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
V
DD
=400V,I
D
=3.5A,
R
G
=20Ω (note4,5)
V
DS
=480V,I
D
=7A ,
V
GS
=10V (note4,5)
V
GS
=0V,I
SD
=A
V
GS
=0V,I
SD
=7A
dl
F
/dt=100A/μs
(note4)
Note:1. repetitive rating: pulse width limited by maximum junction temperature
2. L=60mH, I
AS
=1.7A, V
DD
=150V ,staring T
J
=25ºC
3. I
SD
<7.0A,di/dt<200A/μs, V
DD
<BV
DSS
, staring T
J
=25 ºC
4. Pulse test: pulse width<300μs, duty cycle<2%
5. Essentially independent of operating temperature typical characteristics.
3 of 6
Rev 1.0 JUN 2015
KIA
SEMICONDUCTORS
7A，650V
N-CHANNEL MOSFET
65R700
7.Test
circuits and waveforms
4 of 6
Rev 1.0 JUN 2015
KIA
SEMICONDUCTORS
7A，650V
N-CHANNEL MOSFET
65R700
5 of 6
Rev 1.0 JUN 2015
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