KIA
SEMICONDUCTORS
150A，30V
N-CHANNEL MOSFET
2803A
1.
Features
n
n
n
n
n
n
R
DS(on)
=2.2mΩ（typ.）@ V
GS
=10V
Low On-Resistance
Fast Switching
100% Avalanche Tested
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
2.
Features
KIA2803A designed by the trench processing techniques to achieve extremely low on-resistance.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These features combine to make this design an extremely efficient
and reliable device for use in Motor applications and a wide variety of other applications.
3.
Pin configuration
Pin
1
2
3
4
Function
Gate
Drain
Source
Drain
1 of 5
Rev 1.0 DEC. 2016
KIA
SEMICONDUCTORS
150A，30V
N-CHANNEL MOSFET
2803A
4.
Absolute maximum ratings
(T
C
=25 ºC , unless otherwise specified)
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current @V
GS
=10V,T
C
=25 ºC,(See Fig2)
Pulsed drain current tested T
C
=25 ºC (Sillicon Limit)
Avalanche energy single pulse
2
Maximum Power dissipation T
C
=25 ºC
Maximum junction temperature
Storage temperature range
Diode continuous forward current T
C
=25 ºC
1
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
P
D
T
J
T
STG
I
S
Ratings
30
±20
150
600
625
160
175
-55~+175
150
Units
V
V
A
A
mJ
W
°C
°C
A
5.
Thermal characteristics
Parameter
Thermal resistance,Junction-to-case
Symbol
θ
JC
Rating
0.8
Unit
ºC/W
2 of 5
Rev 1.0 DEC. 2016
KIA
SEMICONDUCTORS
150A，30V
N-CHANNEL MOSFET
2803A
6.
Electrical characteristics
Parameter
Off Characteristics
Drain-source breakdown voltage
Drain-to-source leakage current
Gate-to-source leakage current
On characteristics
Gate threshold voltage
Static drain-source on-resistance
1
Static drain-source on-resistance
1
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-source charge
Gate-drain (Miller)charge
Resistive switching characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain body diode characteristics
Diode forward voltage
4
Reverse recovery time
Reverse recovery charge
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
R
DS(on)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
(T
C
=25°C,unless otherwise notes)
Conditions
Min
Typ Max Unit
V
GS
=0V,I
D
=250μA
V
DS
=24V ,V
GS
=0V
T
C
=125 ºC
V
GS
=20V,V
DS
=0V
V
GS
=-20V,V
DS
=0V
V
DS
=V
GS
, I
D
=250μA
V
GS
=10V,I
D
=40A
V
GS
=4.5V,I
D
=40A
30
-
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.3
2.2
2.8
4050
680
355
110
35
14
19
50
20
26
-
32
33
-
1
100
100
-100
2.0
3.0
4.0
-
-
-
-
-
-
-
-
-
-
1.3
-
-
V
μA
μA
nA
nA
V
mΩ
mΩ
V
DS
=15V,V
GS
=0V,f=1.0MHz
pF
V
DS
=15V,I
D
=20A,V
GS
=4.5V
nC
T
d(ON)
t
rise
V
DD
=15V,I
D
=10A,V
GS
=4.5V,
R
G
=6.8Ω
T
d(OFF)
t
fall
T
J
=25°C,unless otherwise notes
V
SD
V
GS
=0V,I
SD
=20A
t
rr
I
SD
=30A,di
F
/dt=100A/μs,
T
J
=25°C, V
GS
=0V
Q
rr
nS
V
ns
nC
Note: 1. Pulse width <300μs; duty cycle <2%.
2. Limited by T
Jmax,
Starting T
J
=25°C.L=0.5mH R
G
=25Ω,,I
AS
=50A, V
GS
=10V,
Part not recommended for use above this value.
3. Repetitive rating; pulse width limited by max, junction temperature.
3 of 5
Rev 1.0 DEC. 2016
KIA
SEMICONDUCTORS
150A，30V
N-CHANNEL MOSFET
2803A
7.Typical
characteristics
4 of 5
Rev 1.0 DEC.2016
KIA
SEMICONDUCTORS
150A，30V
N-CHANNEL MOSFET
2803A
5 of 5
Rev 1.0 DEC. 2016
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