Plastic-Encapsulate Mosfets
FEATURES
Lower on-resistance
Reliable and Rugged
SI2306
N-Channel MOSFET
Absolute Maximum Ratings (TA=25
o
C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-source Voltage
Drain Current (Continuous)
Drain Current (Pulsed)
a
Total Power Dissipation @TA=25 C
Operating Junction and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)
o
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
j,
T
stg
R
θJA
Ratings
30
20
Unit
V
V
A
A
W
°C
°C/W
G
3.16
10
0.75
-55 to +150
1.Gate
2.Source
3.Drain
D
SOT-23
100
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
a
Forward Transconductance
a
Diode Forward Voltage
Dynamic
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes :
a.Pulse Test : Pulse Width≤300µs, duty cycle
≤2%.
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15V,
R
L
=15Ω,
I
D
≈1A,
V
GEN
=10V,Rg=6Ω
7
12
14
6
Q
g
Q
gt
Q
gs
Q
gd
R
g
C
iss
C
oss
C
rss
V
DS
=15V,V
GS
=0V,f =1MHz
f =1.0MHz
2.5
V
DS
=15V,V
GS
=10V,I
D
=2.5A
V
DS
=15V,V
GS
=5V,I
D
=2.5A
3.0
6
1.6
0.6
5
305
65
29
V
(BR)DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
SD
V
GS
= 0V, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
DS
=0V, V
GS
=±20V
V
DS
=30V, V
GS
=0V
V
GS
=10V, I
D
=3.5A
V
GS
=4.5V, I
D
=2.8A
V
DS
=4.5V, I
D
=2.5A
I
S
=1.25A,V
GS
=0V
0.038
0.052
7.0
0.8
30
1.0
Symbol
Test Condition
Min
Typ
S
Max
Unit
3.0
±100
0.5
0.047
0.065
V
nA
µA
Ω
S
1.2
V
4.5
9
nC
7.5
Ω
pF
11
18
25
10
ns
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
嵌入式系统
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