Plastic-Encapsulate Mosfets
P-Channel
Enhancement Mode Power MOSFET
Description
The 4953 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
4953
General Features
●
V
DS
= -30V,I
D
= -5.1A
R
DS(ON)
< 105mΩ @ V
GS
=-4.5V
R
DS(ON)
< 55mΩ @ V
GS
=-10V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
G1
G2
D1
D2
SOP-8 top view
Application
●
PWM applications
●
Load switch
●
Power management
pin assignment
S1
S2
Schematic diagram
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain
Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
-30
±20
-4.9
-20
2
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
50
℃
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=-250μA
V
DS
=-24V,V
GS
=0V
-30
-33
-1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P5 -P1
Plastic-Encapsulate Mosfets
4953
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=-1.7A
-1.2
V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DS
=-15V,I
D
=-5.1A,V
GS
=-10V
V
DD
=-15V, ID=-1A,
V
GS
=-10V,R
GEN
=6Ω
7
13
14
9
12
2.2
3
nS
nS
nS
nS
nC
nC
nC
C
lss
C
oss
C
rss
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
520
130
70
PF
PF
PF
V
GS(th)
R
DS(ON)
g
FS
V
DS
=V
GS
,I
D
=-250μA
V
GS
=-10V, I
D
=-5.1A
V
GS
=-4.5V, I
D
=-4.2A
V
DS
=-15V,I
D
=-4.5A
4
-1
-1.6
48
73
7
-3
55
105
V
mΩ
mΩ
S
I
GSS
V
GS
=±20V,V
DS
=0V
±100
nA
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P5 -P2
Plastic-Encapsulate Mosfets
4953
Typical Electrical and Thermal Characteristics
t
d(on)
t
on
t
r
90%
t
d(off)
t
off
t
f
90%
V
OUT
10%
INVERTED
10%
90%
V
IN
10%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction Temperature(℃)
I
D
- Drain Current (A）
P
D
Power(W)
T
J
-Junction Temperature(℃)
Figure 3 Power Dissipation
Figure 4 Drain Current
Rdson On-Resistance(mΩ)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
I
D
- Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P5 -P3
Plastic-Encapsulate Mosfets
4953
Normalized On-Resistance
I
D
- Drain Current (A)
Vgs Gate-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Transfer Characteristics
Rdson On-Resistance(mΩ)
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
I
s
- Reverse Drain Current (A)
Figure 10 Capacitance vs Vds
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P5 -P4
Plastic-Encapsulate Mosfets
4953
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P5 -P5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
