GOFORD
Description
The G10N10A uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
G10N10A
General Features
●
V
DSS
@10V
(typ)
100V
R
DS(ON)
R
DS(ON)
@ 4.5V
(typ)
Schematic diagram
I
D
10A
Marking and pin assignment
16
m
Ω
18
m
Ω
●
Special process technology for high ESD capability
●
High density cell design for ultra low Rdson
●
Fully characterized avalanche voltage and current
Application
●
DC/DC Primary Side Switch
●
Telecom/Server
●
Synchronous Rectification
SOP-8
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
D
(100℃)
Limit
100
±20
10
7
70
3.1
-55 To 150
Unit
V
V
A
A
A
W
℃
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
40
℃
/W
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 1
GOFORD
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage
Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
(Note 3)
(Note 2)
G10N10A
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
DS(ON)
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
I
S
t
rr
Qrr
Condition
V
GS
=0V I
D
=250μA
V
DS
=100V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=10V, I
D
=10A
V
GS
= 4.5V, I
D
=10A
V
DS
=10V,I
D
=10A
Min
100
-
-
1.0
-
-
-
-
-
-
-
Typ
110
-
-
1.3
16
18
26
2600
590
291
13
14
25
10
90
16
24
0.85
-
33
54
Max
-
1
±100
1.6
20
22
-
-
-
-
-
-
-
-
-
-
-
1.2
10
Unit
V
μA
nA
V
mΩ
mΩ
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
V
DS
=50V,V
GS
=0V,
F=1.0MHz
V
DD
=50V,I
D
=10A,R
L
=5Ω,
R
G
=1Ω,V
GS
=10V
-
-
-
-
I
D
=10A,V
DD
=50V,V
GS
=10V
-
-
V
GS
=0V,I
S
=10A
T
J
= 25°C, I
F
= 10A
di/dt = 100A/μs
(Note3)
-
-
-
-
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300μs, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 2
GOFORD
Test Circuit
1）E
AS
test Circuit
G10N10A
2）Gate charge test Circuit
3）Switch Time Test Circuit
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 3
GOFORD
Typical Electrical and Thermal Characteristics (Curves)
G10N10A
I
D
- Drain Current (A)
Normalized On-Resistance
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 1 Output Characteristics
Figure 4 Rdson-JunctionTemperature
Vgs Gate-Source Voltage (V)
Vgs Gate-Source Voltage (V)
I
D
- Drain Current (A)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Rdson On-Resistance(Ω)
I
D
- Drain Current (A)
I
s
- Reverse Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 Source- Drain Diode Forward
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 4
GOFORD
G10N10A
Power Dissipation (W)
C Capacitance (pF)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Vds Drain-Source Voltage (V)
T
J
-Junction Temperature(℃)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
r(t),Normalized Effective
Transient Thermal Impedance
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
WWW.GOFORDSEMI.COM
TEL：0755-29961262
FAX：0755-29961466
Page 5
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