BSS138
N-Channel 50V(D-S) MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
FEATURE
TrenchFET Power MOSFET
SOT-23
1. GATE
APPLICATIONS
Load Switch for Portable Devices
DC/DC Converter
2. SOURCE
3. DRAIN
MARKING: SS
■
MAXIMUM RATINGS
RATINGS最大額定值
Characteristic
特性參數
Drain-Source V oltage
漏極-源極電壓
Gate- Source V oltage
栅極-源極電壓
Drain Current (continuous)
漏極電流-連續
Drain Current (pulsed)
漏極電流-脉冲
Symbol
符號
BV
DSS
V
GS
I
DR
I
DRM
Max
最大值
50
+20
220
880
Unit
單½
V
V
mA
mA
■
THERMAL CHARACTERISTICS
熱特性
Characteristic
特性
Total Device Dissipation
½耗散功率
T
A
=
25℃環境溫度爲 25℃
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature
結溫和儲存溫度
Symbol
符號
P
D
Max
最大值
225
1.8
Unit
單½
mW
mW/℃
℃/W
R
Θ
JA
T
J
,
T
stg
350
150℃,-55to+150℃
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 1
AS-3150008
BSS138
N-Channel 50V(D-S) MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
■
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度爲
25℃)
Characteristic
特性參數
Drain-Source Breakdown V oltage
漏極-源極擊穿電壓(I
D
=250uA,V
GS
=0V)
Gate Threshold V oltage
栅極開启電壓(I
D
=1mA,V
GS
= V
DS
)
Diode Forward V oltageDrop
内附二極管正向壓降(I
SD
=220mA,V
GS
=0V)
Zero Gate V oltageDrain Current
零栅壓漏極電流(V
GS
=0V, V
DS
= BV
DSS
)
(V
GS
=0V, V
DS
=0.6BV
DSS
)
Gate Body Leakage
栅極漏電流(V
GS
=+20V, V
DS
=0V)
Static Drain-Source On-State Resistance
静态漏源導通電阻(I
D
=220mA,V
GS
=10V)
(I
D
=220mA,V
GS
=4.5V)
Input Capacitance
輸入電容
(V
GS
=0V, V
DS
=25V,f=1MHz)
Common Source Output Capacitance
共源輸出電容
(V
GS
=0V, V
DS
=25V,f=1MHz)
Turn-ON Time
开启時間
(V
DS
=30V, I
D
=200mA, R
GEN
=25
Ω
)
Turn-OFF Time
关断時間
(V
DS
=30V, I
D
=200mA, R
GEN
=25
Ω
)
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in.99.5%alumina.
3.
Pulse Width<300μs; Duty Cycle<2.0%.
Symbol
符號
BV
DSS
V
GS(th)
V
SD
Min
最小值
50
0.8
Typ
典型值
—
—
Max
最大值
—
1.6
Unit
單½
V
V
—
—
1.4
V
I
DSS
—
—
0.5
100
+100
uA
nA
n
A
I
GSS
—
—
R
DS(ON)
—
—
3.5
6
50
Ω
C
ISS
C
OSS
t
(on)
t
(off)
—
—
pF
—
—
—
—
25
20
pF
ns
—
—
20
ns
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 2
AS-3150008
BSS138
N-Channel 50V(D-S) MOSFET
SOT-23 Plastic-Encapsulate MOSFETS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
Dimensions In Millimeters
Min
Max
0.900
1.150
0.000
0.100
0.900
1.050
0.300
0.500
0.080
0.150
2.800
3.000
1.200
1.400
2.250
2.550
0.950 TYP
1.800
2.000
0.550 REF
0.300
0.500
0°
8°
Dimensions In Inches
Min
Max
0.035
0.045
0.000
0.004
0.035
0.041
0.012
0.020
0.003
0.006
0.110
0.118
0.047
0.055
0.089
0.100
0.037 TYP
0.071
0.079
0.022 REF
0.012
0.020
0°
°
http://www.anbonsemi.com
TEL:886-755-23776891
FAX:886-755-81482182
Document ID
Issued Date
2003/03/08
Revised Date
2012/05/16
Revision
D
Page.
3
Page 3
AS-3150008
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