JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
PXT2222A
TRANSISTOR (NPN)
SOT-89-3L
1.
BASE
2.
COLLECTOR
3.
EMITTER
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(PXT2907A)
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Value
75
40
6
600
0.5
150
-55
~150
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
h
FE(6)
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
C
ob
t
d
t
r
t
S
t
f
Unit
V
V
V
mA
W
℃
℃
Test conditions
I
C
= 10μ A,I
E
=0
I
C
= 10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
= 5V , I
C
=0
V
CE
=10V, I
C
= 0.1mA
V
CE
=10V, I
C
= 1mA
V
CE
=10V, I
C
= 10mA
V
CE
=10V, I
C
= 150mA
V
CE
=1V, I
C
= 150mA
V
CE
=10V, I
C
= 500mA
I
C
=500mA, I
B
= 50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
V
CE
=10V, I
C
=20mA
f=100MHz
V
CB
=10V, I
E
= 0,f=1MHz
V
CC
=30V, I
C
=150mA
V
BE(off)
=0.5V,I
B1
=15mA
V
CC
=30V, I
C
=150mA
I
B1
=- I
B2
= 15mA
0.6
300
8
10
25
225
60
35
50
75
100
50
40
1
0.3
2.0
1.2
V
V
V
V
MHz
pF
ns
ns
ns
ns
300
Min
75
40
6
0. 01
0. 01
Max
Unit
V
V
V
μA
μA
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
B,Apr,2012
Typical Characteristics
0.25
PXT2222A
1000
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
1mA
900uA
h
FE
800uA
700uA
h
FE
——
I
C
(A)
0.20
T
a
=100
℃
T
a
=25
℃
100
I
C
COLLECTOR CURRENT
0.15
600uA
500uA
0.10
400uA
300uA
0.05
200uA
I
B
= 100uA
0
2
4
6
8
10
12
14
16
DC CURRENT GAIN
COMMON EMITTER
V
CE
= 10V
10
1
10
100
600
0.00
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
1000
V
CEsat
——
I
C
1200
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
900
T
a
=25
℃
100
600
T
a
=100
℃
T
a
=25
℃
T
a
=100
℃
10
1
10
100
β=10
600
300
1
10
100
β=10
600
COLLECTOR CURREMT
I
C
(mA)
COLLECTOR CURREMT
I
C
(mA)
600
I
C
——
V
BE
500
f
T
——
I
C
100
I
C
COLLECTOR CURRENT
TRANSITION FREQUENCY
f
T
T=
a
10
0
℃
10
1
(MHz)
T =2
5
℃
a
100
(mA)
COMMON EMITTER
V
CE
= 10V
0.1
0
300
600
900
1200
COMMON EMITTER
V
CE
=10V
T
a
=25
℃
10
1
10
100
BESE-EMMITER VOLTAGE V
BE
(mV)
COLLECTOR CURRENT
I
C
(mA)
100
C
ob
/C
ib
——
V
CB
/V
EB
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
600
P
C
——
T
a
COLLECTOR POWER DISSIPATION
P
C
(mW)
20
500
(pF)
C
ib
CAPACITANCE
C
400
10
300
C
ob
200
100
1
0.1
1
10
0
0
25
50
75
100
125
150
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
B,Apr,2012
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