JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC T
MMDT4403
FEATURES
SOT-363 Plastic-Encapsulate Transistors
DUAL TRANSISTOR (PNP+PNP)
SOT-363
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
MRKING:K2T
Maximum Ratings
(Ta=25℃ unless otherwise specified)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal
Resistance
from
Junction to Ambient
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.6
0.2
625
150
-55 to +150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
h
FE(5)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output
capacitance
Delay time
Rise time
Storage time
Fall time
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
ob
t
d
t
r
t
S
t
f
Test
conditions
I
E
=0
I
B
=0
I
C
=0
Min
-40
-40
-5
-0.1
-0.5
-0.1
30
60
100
100
20
-0.4
-0.75
-0.75
200
8.5
15
20
225
30
-0.95
-1.3
V
V
V
V
MHz
pF
nS
nS
nS
nS
300
Typ
Max
Unit
V
V
V
μA
μA
μA
I
C
=-100μA ,
I
C
= -1mA ,
I
E
=-100μA,
V
CB
=-50V, I
E
=0
V
CE
=-35V, I
B
=0
V
EB
=-5V,
V
CE
=-1V,
V
CE
=-1V,
V
CE
=-1 V,
V
CE
=-2 V,
V
CE
=-2 V,
I
C
=0
I
C
= -0.1mA
I
C
= -1mA
I
C
= -10mA
I
C
= -150mA
I
C
= -500mA
I
C
=-150 mA, I
B
=-15mA
I
C
=-500 mA, I
B
=-50mA
I
C
= -150 mA, I
B
=-15mA
I
C
= -500 mA, I
B
=-50mA
V
CE
= -10V, I
C
=-20mA,f = 100MHz
V
CB
=-10V, I
E
=0,f=1MHz
V
CC
=-30V, V
BE
=-2V,I
C
=-150mA ,
I
B1
=-15mA
V
CC
=-30V, I
C
=-150mA
B1
=- I
B2
= -15mA
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E,Nov,2015
Typical Characteristics
Static Characteristic
-180
1000
h
FE
—— I
C
-150
COMMON EMITTER
T
a
=25
℃
-1mA
-
900
uA
-800uA
T
a
=100
℃
(mA)
-700uA
h
FE
I
C
-120
-600uA
100
T
a
=25
℃
COLLECTOR CURRENT
-90
-500uA
-400uA
DC CURRENT GAIN
-60
10
-300uA
-30
-200uA
IB=-100uA
COMMON EMITTER
V
CE
=-2V
-3
1
-0.1
-1
-10
-100
-600
-0
-0
-1
-2
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
-1000
V
CEsat
——
I
C
-5000
V
BEsat
——
I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
-100
T
a
=100
℃
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-1000
T
a
=25
℃
T
a
=25
℃
-10
T
a
=100
℃
-1
-0.1
β=10
-1
-10
-100
-600
-100
-0.1
β=10
-1
-10
-100
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
-600
—— V
BE
100
C
ob
/ C
ib
—— V
CB
/ V
EB
f=1MHz
I
E
=0/ I
C
=0
COMMON EMITTER
V
CE
=-2V
(mA)
-100
C
ib
(pF)
T
a
=25
℃
I
C
COLLECTOR CURRENT
C
ob
10
T
a
=25
℃
-1
-0.1
-0.0
CAPACITANCE
-1.0
-1.2
-10
T
a
=100
℃
C
-0.6
-0.8
1
-0.1
-0.2
-0.4
-1
-10
-20
BASE-EMMITER VOLTAGE V
BE
(V)
REVERSE VOLTAGE
V
(V)
1000
f
T
——
I
C
250
P
c
——
T
a
(MHz)
COLLECTOR POWER DISSIPATION
P
c
(mW)
-100
200
TRANSITION FREQUENCY
f
T
150
100
100
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
10
-1
-10
50
0
0
25
50
75
100
125
150
COLLECTOR CURRENT
I
C
(mA)
AMBIENT TEMPERATURE
T
a
(
℃
)
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2
E,Nov,2015
SOT-363 Package Outline Dimensions
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Dimensions In Millimeters
Min
Max
0.900
1.100
0.000
0.100
0.900
1.000
0.150
0.350
0.080
0.150
2.000
2.200
1.150
1.350
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Dimensions In Inches
Min
Max
0.035
0.043
0.000
0.004
0.035
0.039
0.006
0.014
0.003
0.006
0.079
0.087
0.045
0.053
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
SOT-363 Suggested Pad Layout
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E,Nov,2015
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