KTA1666
Rev.E Mar.-2016
DATA SHEET
描述
/
Descriptions
SOT-89 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a SOT-89 Plastic Package.
特征
/ Features
饱和压降½,开关时间快，½积小，可与互补 KTC4379。
Low saturation voltage, high speed switching time, small flat package, Complementary to KTC4379.
用途
/
Applications
用于功率放大和开关。
Power amplifier and switching applications.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1：Base
印章代码
PIN 2：Collector
PIN 3：Emitter
/ Marking
O
70½140
HNO
**
Y
120½240
HNY
**
h
FE
Classifications
Symbol
h
FE
Range
Marking
http://www.fsbrec.com
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KTA1666
Rev.E Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*P
C
T
j
T
stg
数值
Rating
-50
-50
-5.0
-2.0
-0.4
500
1.0
150
-55½150
单½
Unit
V
V
V
A
A
mW
W
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Base – Continuous
Collector Power Dissipation
Collector Power Dissipation*
Junction Temperature
Storage Temperature Range
*KTA1666 mounted on ceramic substrate(250mm
2
×0.8t)
电性½参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
I
CBO
I
EBO
V
CEO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
-I
B1
=I
B2
=0.05A
测试条件
Test Conditions
V
CB
=-50V
V
EB
=-5.0V
I
C
=-10mA
V
CE
=-2.0V
V
CE
=-2.0V
I
C
=-1.0A
I
C
=-1.0A
V
CE
=-2.0V
V
CB
=-10V
f=1MHz
I
E
=0
I
C
=0
I
B
=0
I
C
=-0.5A
I
C
=-1.5A
I
B
=-0.05A
I
B
=-0.05A
I
C
=-0.5A
I
E
=0
120
40
0.1
1.0
0.1
-50
70
40
-0.5
-1.2
V
V
MHz
pF
μS
μS
μS
240
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-0.1
-0.1
μA
μA
V
Collector Cut-Off Current
Emitter Base Cut-Off Current
Collector to Emitter Breakdown
Voltage
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-On Time
Storage Time
Fall Time
http://www.fsbrec.com
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