2SB772T
Rev.E Mar.-2016
描述
/
Descriptions
DATA SHEET
SOT-89 塑封封装 PNP 半导½三极管。Silicon
PNP transistor in a SOT-89 Plastic Package.
特征
/ Features
饱和压降 V
CE(sat)
小,线性极½,h
FE
高。
Low saturation voltage, excellent h
FE
linearity and high h
FE
.
用途
/
Applications
用于 3 瓦音频放大输出,电压调节器,电源½换器和继电器驱动。
Output stage of 3 watts audio amplifier, regulator, DC-DC converter and relay driver.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
1
2
3
PIN1：Base
印章代码
PIN 2：Collector
PIN 3：Emitter
/ Marking
R
60½120
H72R
**
Q
100½200
H72Q
**
P
160½320
H72P
**
E
200½400
H72E
**
h
FE
Classifications
Symbol
h
FE
Range
Marking
http://www.fsbrec.com
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2SB772T
Rev.E Mar.-2016
极限参数
DATA SHEET
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
数值
Rating
-40
-30
-5.0
-3.0
500
150
-55½150
单½
Unit
V
V
V
A
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
Symbol
V
CBO
V
CEO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
f
T
C
ob
测试条件
Test Conditions
I
C
=-100μA
I
C
=-1mA
V
CB
=-30V
V
EB
=-3.0V
V
CE
=-2.0V
V
CE
=-2.0V
I
C
=-2.0A
I
C
=-2.0A
V
CE
=-5.0V
V
CB
=-10V
f=1.0MHz
I
E
=0
I
B
=0
I
E
=0
I
C
=0
I
C
=-1.0A
I
C
=-20mA
I
B
=-0.2A
I
B
=-0.2A
I
C
=-0.1A
I
E
=0
60
30
160
220
-0.3
-1.0
80
55
-0.5
-2.0
V
V
MHz
pF
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
-40
-30
-1.0
-1.0
400
V
V
μA
μA
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Collector Cut-Off Current
Emitter Base Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
Voltage
Base to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
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FPGA/CPLD
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