KTC3198
Rev.E Mar.-2016
DATA SHEET
描述
/
Descriptions
TO-92 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-92 Plastic Package.
特征
/ Features
极½的 h
FE
线性,½噪声系数,与 KTA1266 互补。
Excellent h
FE
linearity, low noise, complementary pair with KTA1266.
用途
/
Applications
用于普通放大及开关电路。
General amplifier and switching application.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1：Base
放大及印章代码
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking
h
FE
Classifications
Symbol
h
FE
Range
O
70~140
Y
120~240
GR
200~400
BL
300~700
http://www.fsbrec.com
1
/
6
KTC3198
Rev.E Mar.-2016
DATA SHEET
极限参数
/ Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
数值
Rating
60
50
5.0
150
50
625
150
-55½150
单½
Unit
V
V
V
mA
mA
mW
℃
℃
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Base Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
电性½参数
/ Electrical Characteristics(Ta=25℃)
符号
测试条件
Symbol
Test Conditions
I
CBO
V
CB
=60V
I
E
=0
I
EBO
h
FE(1)
h
FE(2)
V
EB
=5.0V
V
CE
=6.0V
V
CE
=6.0V
I
C
=100mA
I
C
=100mA
V
CE
=10V
V
CB
=10V
f=1.0MHz
V
CE
=6.0V
R
g
=10KΩ
V
CB
=10V
f=30MHz
I
C
=0
I
C
=2.0mA
I
C
=150mA
I
B
=10mA
I
B
=10mA
I
C
=1.0mA
I
E
=0
I
C
=0.1mA
f=1.0KHz
I
C
=1.0mA
80
2.0
1.0
50
3.5
10
70
25
100
0.1
0.25
1.0
V
V
MHz
pF
dB
Ω
最小值 典型值 最大值 单½
Min
Typ
Max
Unit
0.1
μA
0.1
700
μA
参数
Parameter
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation
V
CE(sat)
Voltage
Base to Emitter Saturation Voltage V
BE(sat)
Transition Frequency
Collector Capacitance
Noise Figure
Collector- Base Time Constant
f
T
C
ob
NF
r
bb′
http://www.fsbrec.com
2
/
6
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
