DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204
参数名称 | 属性值 |
厂商名称 | ELPIDA |
零件包装代码 | SODIMM |
包装说明 | DIMM, |
针数 | 204 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
Is Samacsys | N |
访问模式 | DUAL BANK PAGE BURST |
其他特性 | AUTO/SELF REFRESH |
JESD-30 代码 | R-XZMA-N204 |
JESD-609代码 | e4 |
内存密度 | 17179869184 bit |
内存集成电路类型 | DDR DRAM MODULE |
内存宽度 | 64 |
功能数量 | 1 |
端口数量 | 1 |
端子数量 | 204 |
字数 | 268435456 words |
字数代码 | 256000000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | |
组织 | 256MX64 |
封装主体材料 | UNSPECIFIED |
封装代码 | DIMM |
封装形状 | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified |
自我刷新 | YES |
最大供电电压 (Vsup) | 1.575 V |
最小供电电压 (Vsup) | 1.425 V |
标称供电电压 (Vsup) | 1.5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | OTHER |
端子面层 | GOLD |
端子形式 | NO LEAD |
端子位置 | ZIG-ZAG |
Base Number Matches | 1 |
EBJ21UE8BAU0-AG-E | EBJ21UE8BAU0-AC-E | EBJ21UE8BAU0-DG-F | EBJ21UE8BAU0-8A-F | EBJ21UE8BAU0-DG-E | EBJ21UE8BAU0-8A-E | EBJ21UE8BAU0-AC-F | EBJ21UE8BAU0-AG-F | |
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描述 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 | DDR DRAM Module, 256MX64, CMOS, ROHS COMPLIANT, SODIMM-204 |
厂商名称 | ELPIDA | ELPIDA | ELPIDA | ELPIDA | ELPIDA | ELPIDA | ELPIDA | ELPIDA |
零件包装代码 | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM | SODIMM |
包装说明 | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, | DIMM, |
针数 | 204 | 204 | 204 | 204 | 204 | 204 | 204 | 204 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-XZMA-N204 | R-XZMA-N204 | R-XZMA-N204 | R-XZMA-N204 | R-XZMA-N204 | R-XZMA-N204 | R-XZMA-N204 | R-XZMA-N204 |
JESD-609代码 | e4 | e4 | e4 | e4 | e4 | e4 | e4 | e4 |
内存密度 | 17179869184 bit | 17179869184 bit | 17179869184 bit | 17179869184 bit | 17179869184 bit | 17179869184 bi | 17179869184 bi | 17179869184 bi |
内存集成电路类型 | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
内存宽度 | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 204 | 204 | 204 | 204 | 204 | 204 | 204 | 204 |
字数 | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words | 268435456 words |
字数代码 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 | 256000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
组织 | 256MX64 | 256MX64 | 256MX64 | 256MX64 | 256MX64 | 256MX64 | 256MX64 | 256MX64 |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装代码 | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
自我刷新 | YES | YES | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V | 1.575 V |
最小供电电压 (Vsup) | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V | 1.425 V |
标称供电电压 (Vsup) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
端子面层 | GOLD | GOLD | GOLD | GOLD | GOLD | GOLD | GOLD | GOLD |
端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
端子位置 | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG | ZIG-ZAG |
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