MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1N5820/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
•
Extremely Low vF
•
Low Power Loss/High Efficiency
•
Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
•
Case: Epoxy, Molded
•
Weight: 1.1 gram (approximately)
•
Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
•
Shipped in plastic bags, 5,000 per bag
•
Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
•
Polarity: Cathode indicated by Polarity Band
•
Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current (2)
VR(equiv)
0.2 VR(dc), TL = 95°C
(R
θJA
= 28°C/W, P.C. Board Mounting, see Note 2)
Symbol
VRRM
VRWM
VR
VRSM
VR(RMS)
IO
1N5820
20
1N5821
30
™
Data Sheet
1N5820
1N5821
1N5822
1N5820 and 1N5822 are
Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
1N5822
40
Unit
V
24
14
36
21
3.0
48
28
V
V
A
v
Ambient Temperature
Rated VR(dc), PF(AV) = 0
R
θJA
= 28°C/W
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
Peak Operating Junction Temperature (Forward Current applied)
TA
90
85
80
°C
IFSM
80 (for one cycle)
A
TJ, Tstg
TJ(pk)
*
65 to +125
150
°C
°C
*THERMAL CHARACTERISTICS
(Note 2)
Characteristic
Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
Rev 2
Symbol
R
θJA
Max
28
Unit
°C/W
©
Rectifier
Inc. 1996
Data
Motorola,
Device
1
1N5820 1N5821 1N5822
*ELECTRICAL CHARACTERISTICS
(TL = 25°C unless otherwise noted) (2)
Characteristic
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25°C
TL = 100°C
(1) Pulse Test: Pulse Width = 300
µs,
Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Symbol
VF
0.370
0.475
0.850
iR
2.0
20
2.0
20
2.0
20
0.380
0.500
0.900
0.390
0.525
0.950
mA
1N5820
1N5821
1N5822
Unit
V
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
TA(max) = TJ(max)
R
θJA
PF(AV)
R
θJA
PR(AV)
(1)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
R
θJA
= Junction–to–ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
TR = TJ(max)
TA(max) = TR
The data of Figures 1, 2, and 3 is based upon dc conditions. For use
in common rectifier circuits, Table 1 indicates suggested factors for
an equivalent dc voltage to use for conservative design, that is:
VR(equiv) = V(FM)
F
(4)
*
*
The factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5821 operated in a 12–volt dc sup-
ply using a bridge circuit with capacitive filter such that IDC = 2.0 A
(IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), R
θJA
=
40°C/W.
Step 1. Find VR(equiv). Read F = 0.65 from Table 1,
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 108°C
@ VR = 9.2 V and R
θJA
= 40°C/W.
Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
N
*
R
θJA
PR(AV)
*
R
θJA
PF(AV)
(2)
Substituting equation (2) into equation (1) yields:
(3)
@
I (FM)
I (AV)
+
10 and IF(AV)
+
1.0 A.
*
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125°C,
when forward power is zero. The transition from one boundary condi-
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115°C.
Step 4. Find TA(max) from equation (3).
TA(max) = 108
(0.85) (40) = 74°C.
**Values given are for the 1N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBR–prefix devices, using
PF(AV) from Figure 7.
Table 1. Values for Factor F
Circuit
Load
Sine Wave
Square Wave
*Note that VR(PK)
Half Wave
Resistive
0.5
0.75
Capacitive*
1.3
1.5
Full Wave, Bridge
Resistive
0.5
0.75
Capacitive
0.65
0.75
Full Wave,
Center Tapped*†
Resistive
1.0
1.5
Capacitive
1.3
1.5
[
2.0 Vin(PK). †Use line to center tap voltage for Vin.
2
Rectifier Device Data
1N5820 1N5821 1N5822
125
TR , REFERENCE TEMPERATURE (
°
C)
20
125
10
8.0
TR , REFERENCE TEMPERATURE (
°
C)
15
20
115
15
10
8.0
115
105
R
q
JA (°C/W) = 70
95
50
40
85
75
2.0
3.0
4.0
5.0
7.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
28
105
R
q
JA (°C/W) = 70
95
50
40
85
75
3.0
4.0
5.0
7.0
10
15
20
30
VR, REVERSE VOLTAGE (VOLTS)
28
Figure 1. Maximum Reference Temperature
1N5820
Figure 2. Maximum Reference Temperature
1N5821
125
TR , REFERENCE TEMPERATURE (
°
C)
20
R
q
JL , THERMAL RESISTANCE
JUNCTION–TO–LEAD (
°
C/W)
115
15
10
8.0
105
R
q
JA (°C/W) = 70
50
85
40
28
75
4.0
5.0
7.0
10
15
20
30
40
40
35
30
25
20
15
10
5.0
0
0
1/8
2/8
3/8
4/8
5/8
6/8
7/8
1.0
VR, REVERSE VOLTAGE (VOLTS)
L, LEAD LENGTH (INCHES)
BOTH LEADS TO HEAT SINK,
EQUAL LENGTH
MAXIMUM
TYPICAL
95
Figure 3. Maximum Reference Temperature
1N5822
Figure 4. Steady–State Thermal Resistance
Rectifier Device Data
3
1N5820 1N5821 1N5822
1.0
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.01
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
The temperature of the lead should be measured using a ther-
mocouple placed on the lead as close as possible to the tie point.
The thermal mass connected to the tie point is normally large
enough so that it will not significantly respond to heat surges
generated in the diode as a result of pulsed operation once
steady–state conditions are achieved. Using the measured val-
ue of TL, the junction temperature may be determined by:
TJ = TL +
D
TJL
LEAD LENGTH = 1/4″
tp
Ppk
Ppk
t1
∆T
JL = Ppk
•
R
θJL
[D + (1 – D)
•
r(t1 + tp) + r(tp) – r(t1)] where:
∆T
JL = the increase in junction temperature above the lead temperature.
r(t) = normalized value of transient thermal resistance at time, t, i.e.:
r(t1 + tp) = normalized value of transient thermal resistance at time
t1 + tp, etc.
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
DUTY CYCLE = tp/t1
PEAK POWER, Ppk, is peak of an
TIME
equivalent square power pulse.
Figure 5. Thermal Response
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMP)
NOTE 3 — APPROXIMATE THERMAL CIRCUIT MODEL
SINE WAVE
I
(FM)
p
(Resistive Load)
I
(AV)
+
R
θS(A)
R
θL(A)
R
θJ(A)
R
θJ(K)
PD
R
θL(K)
R
θS(K)
TA(K)
dc
TA(A)
TL(A)
TC(A)
TJ
TC(K)
TL(K)
Capacitive
Loads
5.0
10
20
SQUARE WAVE
Use of the above model permits junction to lead thermal resis-
tance for any mounting configuration to be found. For a given total
lead length, lowest values occur when one side of the rectifier is
brought as close as possible to the heat sink. Terms in the model
signify:
TA = Ambient Temperature
TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
R
θS
= Thermal Resistance, Heat Sink to Ambient
R
θL
= Thermal Resistance, Lead to Heat Sink
R
θJ
= Thermal Resistance, Junction to Case
PD = Total Power Dissipation = PF + PR
PF = Forward Power Dissipation
PR = Reverse Power Dissipation
(Subscripts (A) and (K) refer to anode and cathode sides, respec-
tively.) Values for thermal resistance components are:
R
θL
= 42°C/W/in typically and 48°C/W/in maximum
R
θJ
= 10°C/W typically and 16°C/W maximum
The maximum lead temperature may be found as follows:
TL = TJ(max)
n
TJL
R
θJL
· PD
where
n
TJL
TJ
≈
125°C
Figure 6. Forward Power Dissipation 1N5820–22
*
[
Mounting Method 1
Mounting Method 3
P.C. Board with
2–1/2″ x 2–1/2″
copper surface.
L = 1/2″
NOTE 2 — MOUNTING DATA
Data shown for thermal resistance junction–to–ambient (R
θJA
)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
TYPICAL VALUES FOR R
θJA
IN STILL AIR
Mounting
Method
1
2
3
Lead Length, L (in)
1/8
50
58
1/4
51
59
28
1/2
53
61
3/4
55
63
R
θJA
°C/W
°C/W
°C/W
P.C. Board where available
copper surface is small.
4
ÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉÉÉÉÉÉ
ÉÉ
ÉÉÉÉÉÉÉ
Mounting Method 2
L
L
VECTOR PUSH–IN
TERMINALS T–28
L
L
BOARD GROUND
PLANE
Rectifier Device Data
1N5820 1N5821 1N5822
50
IFSM , PEAK HALF–WAVE CURRENT (AMP)
100
70
50
TL = 75°C
f = 60 Hz
30
20
30
20
TJ = 100°C
10
i F, INSTANTANEOUS FORWARD CURRENT (AMP)
7.0
5.0
3.0
2.0
25°C
1 CYCLE
SURGE APPLIED AT RATED LOAD CONDITIONS
10
1.0
2.0
3.0
5.0 7.0 10
20
30
50 70 100
NUMBER OF CYCLES
Figure 8. Maximum Non–Repetitive Surge
Current
1.0
0.7
0.5
IR , REVERSE CURRENT (mA)
100
50
20
10
0.3
0.2
5.0
2.0
1.0
0.5
0.2
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.05
0.02
0.01
0
4.0
8.0
12
16
20
24
28
32
36
40
VR, REVERSE VOLTAGE (VOLTS)
500
1N5820
300
25°C
1N5820
1N5821
1N5822
75°C
100°C
TJ = 125°C
0.1
0.07
0.05
Figure 7. Typical Forward Voltage
Figure 9. Typical Reverse Current
C, CAPACITANCE (pF)
NOTE 4 — HIGH FREQUENCY OPERATION
200
TJ = 25°C
f = 1.0 MHz
100
70
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
1N5822
20
30
1N5821
Since current flow in a Schottky rectifier is the result of majority
carrier conduction, it is not subject to junction diode forward and
reverse recovery transients due to minority carrier injection and
stored charge. Satisfactory circuit analysis work may be performed
by using a model consisting of an ideal diode in parallel with a
variable capacitance. (See Figure 11.)
VR, REVERSE VOLTAGE (VOLTS)
Figure 10. Typical Capacitance
Rectifier Device Data
5
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