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IPI80N04S2H4AKSA2: 产品描述Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262-3-1, 3 PIN; 产品类别晶体管; 文件大小192KB，共9页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262-3-1, 3 PIN

	IPI80N04S2H4AKSA2	IPP80N04S2H4AKSA2
描述	Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262-3-1, 3 PIN	Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
厂商名称	Infineon(英飞凌)	Infineon(英飞凌)
包装说明	IN-LINE, R-PSIP-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	compliant
Factory Lead Time	1 week	1 week
Is Samacsys	N	N
雪崩能效等级（Eas）	660 mJ	660 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	40 V	40 V
最大漏极电流 (ID)	80 A	80 A
最大漏源导通电阻	0.004 Ω	0.004 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-262AA	TO-220AB
JESD-30 代码	R-PSIP-T3	R-PSFM-T3
元件数量	1	1
端子数量	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	IN-LINE	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	320 A	320 A
表面贴装	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1