MRF559
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
MRF559G
* G Denotes RoHS Complaint, Pb Free Terminal Finish
Features
•
•
•
•
•
•
Specified @ 12.5 V, 870 MHz Characteristics
Output Power = .5 W
Minimum Gain = 8.0 dB
Efficiency 50%
Cost Effective Macro X Package
Electroless Tin Plated Leads for Improved Solderability
Macro X
DESCRIPTION:
Designed primarily for wideband large signal stages in the UHF frequency range.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
16
30
3.0
150
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
Storage Temperature Range
-65 to +150
ºC
2.0
20
Watts
mW/ ºC
Tstg
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
MRF559
MRF559G
ELECTRICAL SPECIFICATIONS (Tcase = 25
°
C)
STATIC
(off)
Symbol
BVCEO
BVCBO
BVEBO
ICES
Test Conditions
Min.
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage
(IC = 0.1 mAdc, IB = 0)
Emitter-Base Breakdown Voltage
(IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
16
30
3.0
-
Value
Typ.
-
-
-
-
Max.
-
-
-
1.0
Unit
Vdc
Vdc
Vdc
mA
(on)
HFE
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
30
-
200
-
DYNAMIC
Symbol
COB
Test Conditions
Min.
Output Capacitance
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)
-
Value
Typ.
2.5
Max.
3.0
Unit
pF
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
MRF559
MRF559G
FUNCTIONAL
Symbol
Power Gain
G
PE
Test Conditions
Min.
Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc
MHz
MHz
Test Circuit-Figure 1
Pout = 0.5 W, VCE =12.5Vdc
MHz
MHz
f = 870
f = 512
Collector Efficiency
η
8.0
-
Value
Typ.
9.5
13
Max.
-
Unit
dB
f = 870
f = 512
50
-
65
60
-
%
Typical Performance @ VCC = 7.5V
Power Gain
G
PE
Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc
MHz
Test Circuit-Figure 1
Pout = 0.5 W, VCE =7.5Vdc
MHz
f = 870 MHz
f = 512
-
-
6.5
10
-
-
dB
Collector Efficiency
η
f = 870 MHz
f = 512
-
-
70
65
-
-
%
Figure 2. 870 MHz Test Fixture
C1, C2, C4, C5 — 1.0–10 pF Johanson
C7 — 1.0
µF
Tantalum
L2, L3 — Ferrite Bead
Z2 — 30
Ω
2.5 cm
Z4 — 50
Ω
1.2 cm
Microstrip Elements —
ε
r = 2.55
C3, C6 — 0.001
µF
Chip Capacitor
L1, L4 — 4 Turns #26 AWG, 0.3 cm ID, 0.4 cm Long
Z1 — 50
Ω
1.5 cm
Z3 — 50
Ω
2.0 cm
Z5, Z6 — 50
Ω
1.25 cm
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
MRF559
MRF559G
RF Low Power PA, LNA, and General Purpose Discrete Selector Guide
GPE Freq (MHz)
Efficiency (%)
Freq (MHz)
NF (dB)
NF IC (mA)
NF VCE
GPE (dB)
GPE VCC
Ccb(pF)
BVCE
IC max (mA)
3.5
20 400
30 400
30 400
1
1
3
1
1
1
2.6
Gu Max (dB)
12
15
17
13
5.5
11
14
IC max
Device
SO-8
MRF4427, R2
TO-39
2N4427
POWER MACRO
MRF553
POWER MACRO
MRF553T
TO-39
MRF607
TO-39
2N6255
TO-72
2N5179
MACRO X
MRF559
MACRO X
MRF559
TO-39
2N3866A
SO-8
MRF3866, R1, R2
POWER MACRO
MRF555
POWER MACRO
MRF555T
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
NPN
175 0.15 18 60 12 20 400
175 1
10 50 12 20 400
175 1.5 11.5 60 12.5 16 500
175 1.5 11.5 50 12.5 16 500
175 1.75 11.5 50 12.5 16 330
175 3
7.8 50 12.5 18 1000
200
20
6 12 50
512
512
400
400
470
470
0.5
0.5
1
1
1.5
1.5
10
13
10
10
11
11
6.5
9.5
8
8
8
Pout
TO-39
TO-39
SO-8
TO-72
TO-72
TO-39
TO-72
TO-72
MACRO T
MACRO T
SO-8
MACRO X
Macro
TO-72
TO-72
MACRO X
TO-39
2N5109
MRF5943C
2N5179
2N2857
MRF517
MRF904
2N6304
BFR91
BFR96
MRF581A
BFR90
BFY90
MRF914
MRF581
MRF586
NPN 200
NPN 200
NPN 200
NPN 300
NPN 300
NPN 450
NPN 450
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
NPN 500
3
10
15
15
15
6
6
15
6
5
5
10
10
10
5
10
10
15
15
11
14
15
11
GN (dB)
BVCEO
Type
1200
1300
900
1600
4600
4000
1400
3.4 30
3.4 30
4.5 1.5
5.5 50
7.5 50
1.5
5
1.9
2
2
2
2.4
2.5
2.5
3
5
2
2
10
50
50
2
2
5
90
11.4 1000
MRF5943, R1, R2 NPN 200
Ftau (MHz)
Package
Packag
Device
Type
12
15
50
40
25 150
15
15
12
30
50
35
16.5 5000
14.5 500
15
18
20
15
5000
5000
1300
4500
65 7.5 16 150
60 12.5 16 150
45 28 30 400
45 28 30 400
50 12.5 16 400
50 12.5 16 400
70
65
55
55
55
7.5
12.5
12.5
12.5
12.5
16
16
16
16
16
150
150
200
400
400
15 100
15 200
15 200
MRF5812, R1, R2 NPN 500
10 15.5 17.8 5000
1
15
15
12
30
50
40
2.5 50
17.8 5000
14.5 4500
2.2
16 200
17 200
MACRO X
MRF559
NPN 870 0.5
MACRO X
MRF559
NPN 870 0.5
SO-8
MRF8372,R1,R2 NPN 870 0.75
POWER MACRO
MRF557
NPN 870 1.5
POWER MACRO
MRF557T
NPN 870 1.5
MACRO X
MACRO X
MACRO T
MACRO T
MRF951
MRF571
BFR91
BFR90
NPN 1000 1.3
NPN 1000 2.5
NPN 1000
3
5
2
2
6
6
5
10
14
10
8
10
17
11
8000 0.45 10 100
8000
5000
1
1
1
10
15
70
30
12 35
NPN 1000 1.5 10
12.5 5000
TO-39
TO-39
MRF545
MRF544
PNP
NPN
14 1400
13.5 1500
2
70 400
70 400
RF (Low Power PA / General Purpose) Selection
RF (LNA / General Purpose) Selection Guide
Low Cost RF Plastic Package Options
1
1
2
4
3
3
3
1
8
1
5
4
Macro T
Macro X
Power Macro
SO-8
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
MRF559
MRF559G
PIN 1. COLLECTOR
2. EMITTER
3. BASE
4. EMITTER
1.
4.
2.
3.
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005
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