MT3S18T
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S18T
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
•
•
•
Unit: mm
Superior performance in oscillator applications.
Superior noise characteristics
: NF = 1.4 dB, |S
21e
|
2
= 12 dB (f = 1 GHz)
Lead (Pb)-free.
Maximum Ratings
(Ta
=
25°C)
Characteristic
Collector- base voltage
Collector- emitter voltage
Emitter- base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
20
8
1.5
20
10
100
125
−55~125
Unit
V
V
V
mA
mW
mW
°C
°C
TESM
JEDEC
JEITA
TOSHIBA
1.Base
2.Emitter
3.Collector
―
―
2-1B1A
Weight: 0.0022g (typ.)
Storage temperature range
Marking
3
ZM
1
2
1
2005-08-01
MT3S18T
Microwave Characteristics
(Ta
=
25°C)
Characteristic
Transition frequency
Insertion gain
Noise figure
Symbol
f
T
⎪S
21e
⎪
2
(1)
⎪S
21e
⎪
2
(2)
NF (1)
Condition
V
CE
=
1 V, I
C
=
5 mA
V
CE
=
1 V, I
C
=
5 mA, f
=
1 GHz
V
CE
=
3 V, I
C
=
15 mA, f
=
1 GHz
V
CE
=
1 V, I
C
=
5 mA, f
=
1 GHz
Min
4
⎯
11.5
⎯
Typ.
6
12
14
1.4
Max
⎯
⎯
⎯
2.2
Unit
GHz
dB
dB
Electrical Characteristics
(Ta
=
25°C)
Characteristic
Collector cutoff current
Emitter cutoff current
DC current gain
Reverse transfer capacitance
Symbol
I
CBO
I
EBO
h
FE
C
re
Condition
V
CB
=
10 V, I
E
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
1 V, I
C
=
5 mA
V
CB
=
1 V, I
E
=
0, f
=
1 MHz(Note)
Min
⎯
⎯
90
⎯
Typ.
⎯
⎯
⎯
0.4
Max
0.1
1
150
0.65
pF
Unit
µA
µA
Note: C
re
is measured with a three-terminal method using a capacitance bridge.
Caution
This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before
handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the
environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers
and other objects that come into direct contact with devices should be made of antistatic materials.
2
2005-08-01
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
