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MT3S19TU(TE85L)

产品描述TRANSISTOR,BJT,NPN,6V V(BR)CEO,80MA I(C),SOT-416VAR
产品类别晶体管   
文件大小163KB,共5页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
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MT3S19TU(TE85L)概述

TRANSISTOR,BJT,NPN,6V V(BR)CEO,80MA I(C),SOT-416VAR

MT3S19TU(TE85L)规格参数

参数名称属性值
厂商名称Toshiba(东芝)
包装说明,
Reach Compliance Codeunknown
Is SamacsysN
最大集电极电流 (IC)0.08 A
配置Single
最小直流电流增益 (hFE)100
最高工作温度150 °C
极性/信道类型NPN
最大功率耗散 (Abs)0.9 W
表面贴装YES
标称过渡频率 (fT)9000 MHz
Base Number Matches1

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MT3S19TU
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S19TU
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
2.1±0.1
+0.1
0.3 -0.05
3
0.166±0.05
1.7±0.1
0.65±0.05
Unit: mm
Features
High Gain : |S
21e
| =13 dB (typ.) (@ f = 1 GHz)
2
2.0±0.1
Low-Noise Figure : NF = 1.5 dB (typ.) (@ f = 1 GHz)
1
2
3
T6
1
2
0.7±0.05
Marking
1.BASE
2.EMITTER
3.COLLECTOR
UFM
JEDEC
-
JEITA
-
TOSHIBA
2-2U1B
Weight: 6.6 mg (typ.)
Rating
12
6
2
80
10
900
150
−55
to
150
Unit
V
V
V
mA
mA
mW
°C
°C
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-basevoltage
Collector-emitter voltage
Emitter-base voltage
Collector-current
Base-current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C(Note 1)
T
j
T
stg
Note 1: The device is mounted on a ceramic board (25.4 mm x 25.4 mm x 0.8 mm (t))
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-03-31

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