MRF176GU: 产品描述RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN; 产品类别晶体管; 文件大小943KB，共13页; 制造商MACOM; 官网地址http://www.macom.com; 标准

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MRF176GU概述

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN

MRF176GU规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	MACOM
包装说明	CASE 375-04, 4 PIN
针数	4
制造商包装代码	CASE 375-04
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
外壳连接	SOURCE
配置	COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压	125 V
最大漏极电流 (Abs) (ID)	16 A
最大漏极电流 (ID)	16 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
最高频带	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-CDFM-F4
元件数量	2
端子数量	4
工作模式	ENHANCEMENT MODE
最高工作温度	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	400 W
认证状态	Not Qualified
表面贴装	YES
端子形式	FLAT
端子位置	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
Base Number Matches	1

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MRF176GU

The RF MOSFET Line

200/150W, 500MHz, 50V

Designed for broadband commercial and military applications using push

pull circuits at frequencies to 500 MHz. The high power, high gain and

broadband performance of these devices makes possible solid state

transmitters for FM broadcast or TV channel frequency bands.

N–Channel enhancement mode

Rev. V1

Product Image



Electrical performance

MRF176GU @ 50 V, 400 MHz (―U‖ Suffix)

Output power — 150 W

Power gain — 14 dB typ.

Efficiency — 50% typ.

MRF176GV @ 50 V, 225 MHz (―V‖ Suffix)

Output power — 200 W

Power gain — 17 dB typ.

Efficiency — 55% typ.

100% ruggedness tested at rated output power

Low thermal resistance

Low C

rss

— 7.0 pF Typ @ V

= 50 V

CASE 375–04, STYLE 2

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit

www.macom.com

for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

MRF176GU相似产品对比

	MRF176GU	MRF176GV
描述	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CASE 375-04, 4 PIN
是否无铅	不含铅	不含铅
是否Rohs认证	符合	符合
包装说明	CASE 375-04, 4 PIN	CASE 375-04, 4 PIN
针数	4	4
制造商包装代码	CASE 375-04	CASE 375-04
Reach Compliance Code	compliant	compliant
ECCN代码	EAR99	EAR99
Is Samacsys	N	N
外壳连接	SOURCE	SOURCE
配置	COMMON SOURCE, 2 ELEMENTS	COMMON SOURCE, 2 ELEMENTS
最小漏源击穿电压	125 V	125 V
最大漏极电流 (Abs) (ID)	16 A	16 A
最大漏极电流 (ID)	16 A	16 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
最高频带	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 代码	R-CDFM-F4	R-CDFM-F4
元件数量	2	2
端子数量	4	4
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	200 °C	200 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	400 W	400 W
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	FLAT	FLAT
端子位置	DUAL	DUAL
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON
Base Number Matches	1	1