J
, O
ne..
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
The RF Line
Microwave Long Pulse
Power Transistor
Designed for 960-1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode-S transmitters.
.
Guaranteed Performance @ 960 MHz, 36 Vdc
Output Power = 30 Watts Peak
Minimum Gain = 9.0 dB Min (9.5 dB Typ)
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Hermetically Sealed Industry Standard Package
Silicon Nitride Passivated
MRF1OO31
•
•
•
30 W (PEAK)
960-1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Internal Input Matching for Broadband Operation
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage (1)
Emitter-Base Voltage
Collector Current — Continuous (1)
Total Device Dissipation @ T
c
= 25"C (1), (2)
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
VCES
V
CBO
V
EBO
Value
55
55
3.5
3.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/'C
:
C
Ic
PD
Tstg
Tj
110
0.625
- 65 to + 200
200
C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
ROJC
Max
1.6
Unit
C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case B
JC
value
measured @ 23% duty cycle)
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders.
Quality Semi-Conductors
ELECTRICAL CHARACTERISTICS
(T
c
= 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (Ic = 25 mAdc, V
BE
= 0)
Collector-Base Breakdown Voltage (l
c
= 25 mAdc, I
E
= 0)
Emitter-Base Breakdown Voltage (I
E
= 5.0 mAdc, l
c
= 0)
Collector Cutoff Current (VCB
= 36
Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (l
c
= 500 mAdc, V
CE
= 5.0 Vdc)
20
—
—
V(BR)CES
V(BR)CBO
V
(BR)EBO
Symbol
Min
Typ
Max
Unit
55
55
3.5
—
—
—
_
—
—
—
—
2.0
Vdc
Vdc
Vdc
ICBO
mAdc
FUNCTIONAL TESTS
(10 ^s Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle - 25%)
Common-Base Amplifier Power Gain
(V
cc
= 36 Vdc, P
out
= 30 W Peak, f = 960 MHz)
Collector Efficiency
(V
cc
= 36 Vdc, P
out
= 30 W Peak, f = 960 MHz)
Load Mismatch
(V
cc
= 36 VQc, P
ou
, = 30 W Peak, f = 960 MHz,
VSWR =10:1 All Phase Angles)
GPB
9.0
9.5
45
dB
%
'1
40
V
No Degradation in Output Power
r
,_
_L
r
,_
,_L
r
X+
-o +
36 Vdc
LO
1
Z8
I
RF OUTPUT
C1 — 75 pF 100 Mil Chip Capacitor
C2
—
39 pF 100 Mil Chip Capacitor
C3 —0.1 pF
C4 — 1000 (.iF, 50 Vdc, Electrolytic
L1 — 3Turns#18AWG, 1/8" ID, 0.18 Long
Z1-Z9 — Microstrip. See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030"
c
r
= 2.55, 2 Oz Copper
BROADBAND FIXTURE
.628 •
— »|.223
1 350
^
.118
\ -
669
—
1
k,
I
I
2.138
1.020
-H
.218
r^
• -* .215
*-
.083
1
T
I
\*
.780
./33
!
—H
.354
1
.113
in
*
~*
c^
«H
.100
.083
fc
I
.083
T
„
.40(
1
t
|
.128
L,
1i210
Figure 1. Test Circuit
PCB设计
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