Datasheet> 器件分类 > 分立半导体> 晶体管> IRHM4130PBF

IRHM4130PBF: 产品描述Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA; 产品类别分立半导体晶体管; 文件大小486KB，共12页; 制造商International Rectifier （ Infineon ）; 官网地址http://www.irf.com/; 标准

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IRHM4130PBF概述

Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA

IRHM4130PBF规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, S-CSFM-P3
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
雪崩能效等级（Eas）	160 mJ
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V
最大漏极电流 (ID)	14 A
最大漏源导通电阻	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-254AA
JESD-30 代码	S-CSFM-P3
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	SQUARE
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	260
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	56 A
认证状态	Not Qualified
表面贴装	NO
端子形式	PIN/PEG
端子位置	SINGLE
处于峰值回流温度下的最长时间	40
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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PD - 90707D

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (T0-254AA)

Product Summary

Part Number Radiation Level

IRHM7130

100K Rads (Si)

IRHM3130

300K Rads (Si)

IRHM4130

600K Rads (Si)

IRHM8130

1000K Rads (Si)

DS(on)

0.18Ω

14A

IRHM7130

100V, N-CHANNEL

RAD Hard HEXFET

TECHNOLOGY

TO-254AA

International Rectifiers RADHard HEXFET

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low R

DS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Ceramic Package

Light Weight

Absolute Maximum Ratings

Parameter

ID @ VGS = 12V, TC = 25°C

ID @ VGS = 12V, TC = 100°C

IDM

PD @ TC = 25°C

VGS

EAS

IAR

EAR

dv/dt

TSTG

Continuous Drain Current

Pulsed Drain Current

➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

➁

Avalanche Current

➀

Repetitive Avalanche Energy

➀

Peak Diode Recovery dv/dt

➂

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

For footnotes refer to the last page

9.0

0.60

±20

160

7.5

5.5

-55 to 150

Pre-Irradiation

Units

W/°C

V/ns

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3(Typical )

www.irf.com

7/5/01

IRHM4130PBF相似产品对比

	IRHM4130PBF	IRHM4130UPBF	IRHM4130DPBF	IRHM4130D	IRHM4130U
描述	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN	Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, TO-254AA, 3 PIN
是否无铅	不含铅	不含铅	不含铅	含铅	含铅
是否Rohs认证	符合	符合	符合	不符合	不符合
厂商名称	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
包装说明	FLANGE MOUNT, S-CSFM-P3	FLANGE MOUNT, S-CSFM-P3	FLANGE MOUNT, S-CSFM-P3	FLANGE MOUNT, S-CSFM-P3	FLANGE MOUNT, S-CSFM-P3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N	N
雪崩能效等级（Eas）	160 mJ	160 mJ	160 mJ	160 mJ	160 mJ
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (ID)	14 A	14 A	14 A	14 A	14 A
最大漏源导通电阻	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω	0.2 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	S-CSFM-P3	S-CSFM-P3	S-CSFM-P3	S-CSFM-P3	S-CSFM-P3
元件数量	1	1	1	1	1
端子数量	3	3	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
峰值回流温度（摄氏度）	260	260	260	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	56 A	56 A	56 A	56 A	56 A
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO
端子形式	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
处于峰值回流温度下的最长时间	40	40	40	NOT SPECIFIED	NOT SPECIFIED
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1
零件包装代码	-	TO-254AA	TO-254AA	TO-254AA	TO-254AA
针数	-	3	3	3	3

IRHM4130PBF

IRHM4130PBF概述

IRHM4130PBF规格参数

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IRHM4130PBF相似产品对比

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