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MT45W2MV16BAFB-706LWT

产品描述Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, FBGA-54
产品类别存储   
文件大小816KB,共55页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT45W2MV16BAFB-706LWT概述

Pseudo Static RAM, 2MX16, 70ns, CMOS, PBGA54, FBGA-54

MT45W2MV16BAFB-706LWT规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Micron Technology
零件包装代码BGA
包装说明VFBGA,
针数54
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Is SamacsysN
最长访问时间70 ns
JESD-30 代码R-PBGA-B54
JESD-609代码e0
长度8 mm
内存密度33554432 bit
内存集成电路类型PSEUDO STATIC RAM
内存宽度16
功能数量1
端子数量54
字数2097152 words
字数代码2000000
工作模式ASYNCHRONOUS
最高工作温度85 °C
最低工作温度-25 °C
组织2MX16
封装主体材料PLASTIC/EPOXY
封装代码VFBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行PARALLEL
峰值回流温度(摄氏度)235
认证状态Not Qualified
座面最大高度1 mm
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级OTHER
端子面层Tin/Lead/Silver (Sn/Pb/Ag)
端子形式BALL
端子节距0.75 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度6 mm
Base Number Matches1

文档预览

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ADVANCE
2 MEG x 16
ASYNC/PAGE/BURST CellularRAM MEMORY
BURST
CellularRAM
TM
Features
Single device supports asynchronous, page, and burst
operations
V
CC
, V
CC
Q Voltages
1.70V–1.95V V
CC
1.70V–2.25V V
CC
Q (Option W)
2.30V–2.70V V
CC
Q (Option V—contact factory)
2.70V–3.30V V
CC
Q (Option L—contact factory)
Random Access Time: 70ns
Burst Mode Write Access
Continuous burst
Burst Mode Read Access
4, 8, or 16 words, or continuous burst
MAX clock rate: 104 MHz (
t
CLK = 9.62ns)
Burst initial latency: 39ns (4 clocks) @ 104 MHz
t
ACLK: 6.5ns @ 104 MHz
MT45W2MW16BAFB
Figure 1: Ball Assignment 54-Ball FBGA
1
A
B
C
D
E
F
G
H
J
LB#
2
OE#
3
A0
4
A1
5
A2
6
CRE
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
NC
A16
DQ4
V
SS
Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns
Intrapage read access: 20ns
Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Initial access, burst READ:
(39ns [4 clocks] @ 104 MHz) < 35mA
Continuous burst READ < 15mA
Standby: 90µA Low-power; 110µA Standard
Deep power-down < 10µA
Low-Power Features
Temperature Compensated Refresh (TCR)
On-Chip Sensor Control
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
WAIT
CLK
ADV#
NC
NC
NC
Top View
(Ball Down)
See Table 1 on page 6 for ball descriptions, and Figure 44 on
page 52 for 54-ball mechanical drawing.
Options
(continued)
Designator
6
1
1
None
L
WT
IT
1
Options
Configuration:
2 Meg x 16
V
CC
Core Voltage Supply:
1.80V – MT45WxMx16BA
V
CC
Q I/O Voltage
3.0V – MT45WxML16BA
2.5V – MT45WxMV16BA
1.8V – MT45WxMW16BA
Package
54-ball FBGA
54-ball FBGA—Lead-free
Timing
60ns access
70ns access
85ns access
Designator
MT45W2Mx16BA
Frequency
66 MHz
104 MHz
Standby Power
Standard
Low-power
Operating Temperature Range
Wireless (-25°C to +85°C)
Industrial (-40°C to +85°C)
W
L
1
V
1
W
FB
BB
1
-60
1
-70
-85
NOTE:
1. Contact factory.
Part Number Example:
MT45W2MW16BAFB-706LWT
1
09005aef80ec6f63
Burst CellularRAM_32.fm - Rev. A 2/18/04 EN
©2004 Micron Technology, Inc. All Rights Reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.

 
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